3D Memory Bridge Regions for Stack Stability
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Solution Overview
Problem
Three-dimensional memory devices face challenges in preventing stack collapse during the replacement process due to lack of adequate structural support, which affects the integrity and performance of the memory arrays.
Innovation Solution
The implementation of a three-dimensional memory device design that includes alternating stacks of word lines and insulating layers, with dielectric separator structures and bridge regions to provide enhanced structural support. This design involves forming vertically alternating sequences of unit layer stacks with continuous insulating and sacrificial material layers, and etching processes to create backside recesses and electrically conductive layers, ensuring stability and preventing stack collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional three-dimensional memory device structures are used without additional support features, then the device complexity is reduced and manufacturing is easier, but the memory stacks are prone to collapse during the replacement process
Solution Approach 1:
The memory device structure is segmented into distinct functional regions including bridge regions that separate first and second word-line regions. These bridge regions contain dielectric separator structures that divide the continuous insulating layers into discrete segments, providing structural support while maintaining electrical isolation between adjacent memory stacks
Solution Approach 2:
Dielectric separator structures are introduced as intermediary elements within the bridge regions. These separators act as mediators that provide mechanical support to prevent stack collapse while simultaneously maintaining electrical isolation between adjacent word-line regions, thus resolving the contradiction between structural stability and electrical functionality
2Strength
If dielectric separator structures and bridge regions are added to provide structural support, then stack collapse is prevented and structural integrity is enhanced, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The continuous insulating layers are formed to extend through the bridge regions before the dielectric separator structures are fully defined. This preliminary formation of the insulating layer framework provides a pre-established structural scaffold that simplifies subsequent processing steps and reduces manufacturing complexity
Solution Approach 2:
The continuous insulating layers serve multiple functions: they provide electrical isolation between conductive elements, serve as a structural framework that extends through bridge regions to prevent collapse, and act as a foundation for forming dielectric separator structures. This multi-functionality reduces the need for additional specialized components, simplifying manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively prevents stack collapse and enhances the structural integrity of three-dimensional memory devices, ensuring reliable operation and performance by providing robust structural support through the use of dielectric separator structures and bridge regions.
Implementation Method 1
forming backside recesses by introducing into the backside trenches an etchant that etches the continuous sacrificial material layers selective to the continuous insulating layers
Data Source
AI summary
A three-dimensional memory device includes a first word-line region including a first alternating stack of first word lines and continuous insulating layers, first memory stack structures vertically extending through the first alternating stack, a second word-line region comprising a second alternating stack of second word lines and the continuous insulating layers, second memory stack structures vertically extending through the second alternating stack, plural dielectric separator structures located between the first word-line region and the second word-line region, and at least one bridge region located between the plural dielectric separator structures and between the between the first word-line region and the second word-line region. The continuous insulating layers extend through the at least one bridge region between the first alternating stack in the first word-line region and the second alternating stack in the second word-line region.