3D Memory Device Fabrication via Stress-Mediating Buffer Layer
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Solution Overview
Problem
The challenge lies in manufacturing miniaturized memory devices with 3-dimensional structures while preventing substrate deformation due to stress differences between thin films during deposition.
Innovation Solution
The method involves alternately stacking dielectric and sacrificial layers on a substrate, forming holes and openings, and using specific gases to deposit silicon oxide and silicon nitride layers, with an etchant to remove the sacrificial layers, and employing an edge ring to press the substrate edge and maintain uniform temperature and pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thin films are deposited alternately on substrate, then 3-dimensional memory device structure is formed, but substrate deformation occurs due to stress difference between thin films
Solution Approach 1:
A buffer layer is introduced as an intermediary between the thin films and the substrate. This buffer layer has intermediate stress characteristics that compensate for the stress differences between alternating thin films, preventing substrate deformation while allowing the 3D structure to be formed. The buffer layer acts as a stress mediator that absorbs and balances the cumulative stress from multiple deposited layers.
Solution Approach 2:
The stress characteristics of the buffer layer are specifically controlled by adjusting its material composition and thickness parameters. By changing these parameters, the buffer layer's stress can be tuned to match and counterbalance the stress from the alternating thin films, thereby preventing substrate warpage during the deposition process.
2Volume of moving object
If miniaturization is pursued, then memory device size is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent transitions from 2D planar memory structures to 3D vertical structures by stacking multiple thin film layers alternately. This dimensional change allows increased storage capacity within a smaller footprint, achieving miniaturization while the buffer layer simplifies the manufacturing process by preventing substrate deformation that would complicate fabrication.
Solution Approach 2:
The memory device is segmented into multiple alternating thin film layers (magnetic layers, non-magnetic layers) stacked vertically. This segmentation into functional layers enables 3D integration and miniaturization, while the buffer layer provides a stable foundation that simplifies the overall manufacturing process despite the increased structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a 3-dimensional memory device structure that reduces volume and prevents substrate deformation, ensuring efficient deposition and maintaining process uniformity.
Implementation Method 1
supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer
Implementation Method 2
supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer
Data Source
AI summary
Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.