Three-Dimensional Memory Capacitor Structure for High Density

The patent transitions from planar capacitor structures to three-dimensional capacitor structures by stacking multiple capacitor layers vertically. This dimensional change allows the capacitor to achieve higher capacitance density without increasing the lateral footprint, thereby reducing the influence of CMOS chip size on the final chip dimensions while maintaining high storage density.

The patent implements a nested structure where multiple capacitor electrodes and dielectric layers are stacked within each other in the vertical direction. The first and second electrodes are alternately arranged with dielectric layers between them, creating a compact nested configuration that maximizes capacitance within a limited volume, thus addressing the miniaturization requirements.

The capacitor structure is segmented into multiple discrete layers including first electrodes, second electrodes, and dielectric layers stacked in alternating sequence. This segmentation into modular layers allows for systematic fabrication using standard semiconductor processing techniques while achieving high capacitance density through the cumulative effect of multiple stacked capacitor units.

The patent employs a universal fabrication approach where the same electrode and dielectric layer formation processes are repeated iteratively to create multiple capacitor layers. This multi-functional process design allows conventional fabrication equipment and techniques to be used for creating complex three-dimensional capacitor structures, maintaining ease of manufacture while increasing capacitance density.