3D Memory Array Cavities with Shared Etching for Alignment Control
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Solution Overview
Problem
Forming different sets of cavities with distinct operations in memory manufacturing is associated with high processing costs and potential misalignment issues in three-dimensional memory arrays.
Innovation Solution
A set of multiple cavities is formed through shared material removal operations, with different subsets used to create various features, including sacrificial regions with openings for electrical contacts, and these cavities are subsequently isolated to reduce the number of operations and improve manufacturing precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If different sets of cavities are formed with respective distinct operations, then various features can be created, but processing costs increase and misalignment issues occur
Solution Approach 1:
The patent combines multiple cavity formation operations into a single shared material removal operation. A first set of cavities and a second set of cavities are formed simultaneously through the same etching process, eliminating the need for separate operations. This merging approach directly resolves the contradiction by maintaining feature creation versatility while eliminating misalignment issues that arise from multiple distinct operations.
Solution Approach 2:
The shared material removal operation serves multiple functions: it forms both the first set of cavities and the second set of cavities simultaneously. This universal operation replaces what would traditionally require separate specialized operations, thereby reducing processing costs and ensuring alignment consistency while maintaining the ability to create various cavity types for different features.
2Adaptability or versatility
If different sets of cavities are formed with respective distinct operations, then various features can be created, but processing costs increase
Solution Approach 1:
The patent merges multiple cavity formation operations into one shared material removal operation. By performing both the first set of cavity formation and the second set of cavity formation in a single etching process, the number of processing steps is reduced, leading to lower processing costs while still enabling the creation of various memory device features.
Solution Approach 2:
The shared material removal operation continuously forms both sets of cavities in one uninterrupted process. This continuous action eliminates the need to stop, reconfigure, and restart operations for different cavity types, thereby reducing processing time and costs while maintaining versatility in feature creation.
3Adaptability or versatility
If multiple material removal operations are performed, then different cavity features can be created, but the number of operations increases
Solution Approach 1:
The patent merges the formation of the first set of cavities and the second set of cavities into a single material removal operation. This combining of operations increases manufacturing efficiency by reducing the total number of steps required, while the subsequent selective isolation processes enable the creation of diverse cavity features needed for different memory device components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing costs and improves process margins by minimizing misalignment, enhancing the manufacturing efficiency of three-dimensional memory devices.
Implementation Method 1
An etch operation may then be performed to form a set of cavities and openings through the stack of layers
Data Source
AI summary
Methods, systems, and devices for techniques for concurrently-formed cavities in three-dimensional memory arrays are described. As part of forming a memory die, a plurality of cavities may be formed by a set of one or more material removal operations, and different subsets of the plurality of cavities may be used to form different features of the memory die. In some examples, a sacrificial region may be formed in accordance with one or more material addition or removal operations, and such a sacrificial region may include openings that support the formation of various structures of a memory device. After the formation of such structures, the sacrificial region may be isolated from an active region by merging a subset of the previously-formed plurality of cavities.