3D Semiconductor Memory Channel Boosting via Precharge
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Solution Overview
Problem
Conventional two-dimensional semiconductor memory devices have limited integration density due to high costs and complexity in fine-pattern forming technologies, which restricts their performance and cost-effectiveness.
Innovation Solution
The development of three-dimensional semiconductor memory devices with a programming method that includes precharging channels of inhibit strings through a common source line and bitlines, allowing for efficient channel boosting and reduced program disturbance, thereby enhancing integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If three-dimensional semiconductor memory devices are developed to increase integration density, then integration density and cost-effectiveness are improved, but programming operation reliability deteriorates due to channel voltage control issues and program disturbance
Solution Approach 1:
The patent applies preliminary action by pre-charging the channel of the inhibit string to a precharge voltage before the programming operation begins. This precharge step ensures that the channel voltage is already at an optimal level, preventing program disturbance and eliminating the need for complex channel boosting operations during programming, thus maintaining high reliability in three-dimensional memory structures.
Solution Approach 2:
The patent extracts the channel boosting function from the main programming operation by using a separate precharge phase. The common source line is specifically utilized to pre-charge inhibit strings before programming, separating the voltage preparation step from the actual programming step, thereby simplifying the programming operation while maintaining reliability.
2Manufacturing precision
If conventional two-dimensional semiconductor memory devices use fine-pattern forming technologies to increase integration density, then integration density is improved, but manufacturing cost and complexity increase significantly
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional structures by stacking multiple memory cell layers vertically. This dimensional change allows integration density to increase without requiring finer lateral patterning, thereby avoiding the need for expensive and complex fine-pattern forming technologies while achieving higher capacity.
Solution Approach 2:
The patent segments the memory structure into multiple stacked layers with separate cell strings in each layer. Each layer can be independently controlled through bitline and common source line voltage management, allowing complex three-dimensional structures to be managed through simplified modular control schemes rather than requiring complex monolithic patterning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach lowers the cost per bit of three-dimensional semiconductor memory devices, increases integration density, and improves the reliability of programming operations by effectively boosting channel voltages and minimizing program interference.
Implementation Method 1
charging a channel of an inhibit string to a precharge voltage provided to the common source line
Implementation Method 2
boosting the charged channel by providing a wordline voltage to the cell strings
Data Source
AI summary
A programming method of a semiconductor memory device includes charging a channel of an inhibit string to a precharge voltage provided to the common source line and boosting the charged channel by providing a wordline voltage to the cell strings. The inhibit string is connected to a program bitline among the bitlines.