3D Memory Charge Trapping Segmentation
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Solution Overview
Problem
Current three-dimensional memory devices face challenges in efficiently integrating discrete, vertically separated charge storage regions with a thin continuous charge storage layer, which affects the density and performance of memory stacks.
Innovation Solution
A three-dimensional memory device is designed with an alternating stack of insulating and electrically conductive layers, featuring a continuous charge trapping material layer and discrete charge trapping material portions, where the discrete portions are selectively deposited on the outer sidewalls of the continuous layer, vertically separated to enhance charge storage efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If discrete charge trapping material portions are added to increase charge storage capacity, then charge storage density is improved, but device complexity increases due to the need to integrate both continuous and discrete charge storage regions
Solution Approach 1:
The charge storage system is segmented into two distinct components: a continuous charge trapping material layer extending through the alternating stack, and discrete charge trapping material portions located at specific levels. This segmentation allows each component to serve specialized functions - the continuous layer provides baseline charge storage while the discrete portions add supplemental capacity at critical locations, thereby increasing overall charge storage capacity without requiring a complete redesign of the memory structure.
Solution Approach 2:
The discrete charge trapping material portions are nested within the broader continuous charge trapping material layer structure. The discrete portions are positioned to contact the outer sidewall of the continuous layer, creating a nested configuration where the discrete elements are integrated into the continuous framework. This nesting approach allows both charge storage components to coexist in a compact arrangement, increasing capacity while maintaining structural efficiency.
2Manufacturing precision
If the continuous charge trapping material layer is made thinner to allow discrete portions, then manufacturing precision is improved, but charge storage efficiency may worsen due to reduced continuous storage capacity
Solution Approach 1:
The charge storage system employs local quality by having different regions with different properties. The continuous charge trapping material layer provides uniform charge storage throughout the stack, while the discrete charge trapping material portions provide enhanced localized charge storage at specific levels where they contact the continuous layer. This local differentiation allows the thin continuous layer to be compensated by the strategically positioned discrete portions, maintaining overall charge storage efficiency while enabling precise manufacturing of the thin layer.
3Reliability
If discrete charge trapping material portions are vertically separated to minimize inter-level charge leakage, then charge storage reliability is improved, but device complexity increases due to selective deposition requirements
Solution Approach 1:
The continuous charge trapping material layer serves as an intermediary structure that connects and coordinates the discrete charge trapping material portions. By positioning the discrete portions to contact the outer sidewall of the continuous layer, the continuous layer acts as a mediator that ensures proper electrical isolation between vertically separated discrete portions while maintaining their individual charge storage functions. This intermediary approach achieves reliable charge isolation without requiring complex direct isolation structures between each discrete portion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves charge storage efficiency and density by minimizing inter-level charge leakage, allowing for the formation of thicker discrete charge trapping material portions while maintaining a thin continuous charge trapping layer, thus enhancing the overall performance of the memory device.
Implementation Method 1
a continuous charge trapping material layer comprising a dielectric first charge trapping material and extending through multiple electrically conductive layers within the alternating stack; and discrete charge trapping material portions comprising a dielectric second charge trapping material
Data Source
AI summary
Memory openings can be formed through an alternating stack of insulating layers and sacrificial material layers. Memory stack structures including charge storage elements can be formed in the memory openings. Inter-level charge leakage in a three-dimensional memory device including a charge trapping layer can be minimized by employing a thin continuous charge trapping material layer within each memory opening. After removal of the sacrificial material layers and formation of backside recesses, discrete charge trapping material portions can be formed by selective growth of a charge trapping material from physically exposed surfaces of each thin continuous charge trapping material layer. The discrete charge trapping material portions can function as primary charge storage regions, and inter-level charge leakage can be minimized by the small thickness of the thin continuous charge trapping material layer.