3D Memory Contact Region Interlacing for Boundary Alignment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current three-dimensional memory devices face challenges in efficiently integrating separated contact regions that are laterally spaced apart, which affects the structural integrity and operational efficiency of the memory arrays.
Innovation Solution
A semiconductor structure with an alternating stack of insulating and electrically conductive layers is formed over a substrate, extending through regions that include memory array and contact regions, with specific configurations of memory openings and fill structures to ensure continuous electrical connectivity and lateral spacing of contact regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact regions are laterally spaced apart in three-dimensional memory devices, then operational efficiency is improved, but structural integrity deteriorates
Solution Approach 1:
The patent transitions from two-dimensional planar contacts to three-dimensional vertically extending contact structures that pass through multiple alternating insulating and conductive layers. This vertical dimension allows contacts to maintain lateral spacing while achieving structural continuity through the stacked architecture, resolving the contradiction between lateral separation for operational efficiency and structural integrity.
Solution Approach 2:
The patent employs composite structures combining insulating layers, conductive layers, and contact region structures in an alternating stack. This multi-material composite approach enables the contact regions to be laterally spaced while maintaining structural integrity through the interlocking alternating layers that provide both mechanical support and electrical connectivity.
2Productivity
If contact regions are laterally spaced apart, then manufacturing complexity increases, but device performance improves
Solution Approach 1:
The patent divides the memory device into segmented alternating stacks of insulating and conductive layers, with contact regions positioned in specific segments. This segmentation allows for modular manufacturing where each layer can be formed and patterned separately, reducing overall manufacturing complexity while enabling lateral spacing of contacts for improved device performance.
Solution Approach 2:
By introducing the vertical dimension with alternating layers, the patent simplifies the manufacturing process for laterally spaced contacts. Instead of complex lateral patterning, the alternating stack structure provides a systematic approach where contact regions can be formed at different vertical levels, reducing manufacturing complexity while maintaining performance benefits.
3Reliability
If alternating stacks of insulating and conductive layers are used, then electrical connectivity is maintained, but device structure becomes more complex
Solution Approach 1:
The alternating insulating and conductive layers serve multiple functions simultaneously: they provide electrical connectivity through the conductive layers, provide electrical isolation through the insulating layers, and offer structural support for the contact regions. This multi-functionality maintains reliable electrical connectivity while managing structural complexity through a unified alternating stack architecture.
Solution Approach 2:
The composite alternating stack structure combines insulating and conductive materials in a systematic pattern that inherently provides both electrical connectivity and structural organization. This composite approach manages complexity by integrating multiple functions into a single structured system rather than separate components.
Data Source
AI summary
A memory die includes an alternating stack of insulating layers and electrically conductive layers through which memory opening fill structures vertically extend. The memory die includes at least three memory array regions interlaced with at least two contact regions, or at least three contact regions interlaced with at least two memory array regions in the same memory plane. A logic die including at least two word line driver regions can be bonded to the memory die. The interlacing of the contact regions and the memory array regions can reduce lateral offset of boundaries of the word line driver regions from boundaries of the contact regions.