3D Memory Contact Layout to Prevent Source-Layer Current Leakage
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Solution Overview
Problem
Current semiconductor storage devices face issues with current leakage between the contact plug and the source layer, which can lead to irreversible device failure due to broken oxide films.
Innovation Solution
The semiconductor storage device design includes a configuration where the first conductive layers are individually separated under each contact plug, with the upper conductive layer acting as an etching stopper, preventing direct electrical connection and thus minimizing current leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the contact plug is connected to the source layer through an oxide film, then electrical connection is achieved, but current leakage occurs when the oxide film is broken
Solution Approach 1:
The patent introduces an intermediate conductive layer between the contact plug and the source layer. This conductive layer acts as a mediator that provides alternative current paths, ensuring that even if the oxide film breaks, current can still flow through the conductive layer without causing direct short-circuiting between the contact plug and source layer, thus preventing device failure
Solution Approach 2:
The patent applies beforehand cushioning by providing a conductive layer in advance that can compensate for potential oxide film breakdown. This conductive layer is prepared prior to operation and serves as a protective measure, cushioning against the harmful effects of oxide film failure and preventing catastrophic device failure
2Reliability
If the oxide film is used for electrical separation, then current leakage is prevented, but the device is vulnerable to breakdown when the oxide film is broken
Solution Approach 1:
The patent applies local quality by creating different structural configurations in different regions. Specifically, the conductive layer is selectively positioned under contact plugs in tap regions where oxidation occurs, while maintaining different structures in cell regions. This localized approach provides enhanced protection exactly where the oxide film vulnerability exists, without unnecessarily complicating other regions
3Object-affected harmful factors
If the contact plug is electrically separated from the source layer, then current leakage is prevented, but electrical connection is lost
Solution Approach 1:
The patent segments the electrical connection path into multiple components: the oxide film interface, the conductive layer, and the source layer. This segmentation creates redundant connection paths, where the conductive layer serves as an alternative route if the oxide film connection fails, thus maintaining electrical connection reliability while preventing harmful direct leakage
Data Source
AI summary
A semiconductor storage device includes a base body, a stacked body, a plurality of columns, and a plurality of first contacts. The base body includes a substrate, a semiconductor element on the substrate, a lower wiring layer above the semiconductor element in a thickness direction of the base body and connected to the semiconductor element, and a lower conductive layer above the lower wiring layer in the thickness direction. The stacked body is above the lower conductive layer and including an alternating stack of conductive layers and insulating layers. Each of the columns includes a semiconductor body extending through the stacked body and electrically connected to the lower conductive layer. The plurality of first contacts extend through the stacked body and electrically connected to the lower conductive layer. The lower conductive layer is separately provided under each of the plurality of first contacts.