3D Memory Stack Contact Structure for Insulating Layer Stability
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Solution Overview
Problem
There is a need for semiconductor devices with enhanced reliability and integration capabilities to increase data storage capacity in electronic systems, particularly in three-dimensionally arranged memory cells.
Innovation Solution
The semiconductor device includes a substrate with a stacked structure of conductive patterns, inner and outer supporters, contact plugs, and insulating spacers, which are electrically connected and arranged to improve data storage capacity and prevent damage to peripheral circuits during manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensionally arranged memory cells are used instead of two-dimensionally arranged memory cells, then data storage capacity is increased, but manufacturing complexity and reliability challenges increase
Solution Approach 1:
The device is divided into distinct functional regions: cell array region for data storage, connection region for electrical connections, and peripheral circuit region for control logic. This segmentation allows each region to be optimized independently, managing the complexity of 3D structures while maintaining high storage capacity.
Solution Approach 2:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional stacked structures with multiple conductive patterns stacked vertically. This dimensional change dramatically increases data storage capacity per unit area while the patent manages the resulting complexity through careful structural design including supporters and insulating spacers.
2Reliability
If contact plugs extend deeply into the stacked structure to reach conductive patterns, then electrical connection is achieved, but the risk of insulating layer collapse increases
Solution Approach 1:
Inner supporters are positioned within the contact plug structure before the insulating layers are fully formed. This preliminary placement provides immediate structural support during subsequent manufacturing steps, preventing insulating layer collapse before it can occur.
Solution Approach 2:
The inner supporter acts as an intermediary element between the contact plug and the insulating layers. It provides mechanical support to the insulating layers while allowing the contact plug to maintain its electrical connection function, thus mediating between structural integrity requirements and electrical connection requirements.
3Reliability
If insulating spacers are placed between contact plugs and stacked structure, then insulating layers are protected from collapse, but manufacturing process complexity increases
Solution Approach 1:
The insulating spacer is nested within the contact plug structure, with the inner supporter positioned inside the contact plug and the insulating spacer surrounding portions of the contact plug. This nested arrangement protects insulating layers from collapse while integrating multiple functions into a compact structure that can be manufactured in sequence.
4Stability of the object's composition
If multiple supporters are introduced to support insulating layers, then structural stability is improved, but device complexity increases
Solution Approach 1:
Supporters are strategically positioned only in specific locations where insulating layers require support, rather than uniformly throughout the entire device. The inner supporter is placed within the contact plug region, and outer supporters are placed in the connection region, providing localized stability where needed while minimizing overall device complexity.
Data Source
AI summary
A semiconductor device and an electronic system are provided. The semiconductor device may include a substrate including a cell array region and a connection region, a stacked structure including conductive patterns stacked on the substrate, an inner supporter that extends into the stacked structure in the connection region, a contact plug that extends into a portion of the stacked structure and electrically connected to one of the conductive patterns and at least partially extends around the inner supporter in plan view, an insulating spacer between the contact plug and the stacked structure and at least partially extends around the contact plug, and outer supporters spaced apart from the contact plug in the connection region and extending into the stacked structure.