3D Semiconductor Memory Device With Diffusion Stop Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional two-dimensional semiconductor devices face limitations in integration and performance due to the need for expensive and complex equipment to achieve fine pattern formation, which restricts their ability to store large amounts of data effectively.
Innovation Solution
A three-dimensional semiconductor memory device with a stack structure featuring interlayer dielectric layers and gate electrodes alternately stacked on a substrate, including vertical channel structures with a charge storage layer, tunneling dielectric layer, and vertical semiconductor pattern, along with diffusion stop layers to enhance electrical properties and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If two-dimensional or planar semiconductor devices are used to increase integration, then data storage capacity improves, but manufacturing cost increases due to expensive fine pattern formation equipment
Solution Approach 1:
The patent transitions from two-dimensional planar semiconductor devices to three-dimensional vertically stacked memory cells. Multiple memory cells are stacked along the vertical direction (third direction) on a single substrate, enabling increased data storage capacity without requiring additional substrate area or expensive fine pattern formation equipment for lateral scaling.
2Manufacturing precision
If fine pattern formation is achieved in two-dimensional devices, then integration level improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The invention forms memory cells in the vertical dimension through stacking, avoiding the need for extremely fine lateral pattern formation. The vertical channel structures and stacked gate electrodes are formed using conventional patterning techniques applied in the vertical direction, significantly reducing manufacturing complexity while achieving high integration.
3Reliability
If vertical channel structures with multiple dielectric layers are implemented, then electrical properties and reliability improve, but device structure complexity increases
Solution Approach 1:
The vertical channel structure is segmented into multiple functional layers including tunneling dielectric layer, charge storage layer, blocking dielectric layer, and diffusion stop layer. Each layer performs a specific function (tunneling, charge storage, blocking, diffusion prevention), and their sequential stacking creates a modular structure that improves electrical reliability while managing complexity through functional decomposition.
Solution Approach 2:
The patent employs composite dielectric structures with different material properties in the vertical channel. The tunneling dielectric layer, charge storage layer, and blocking dielectric layer are formed from different dielectric materials with distinct electrical characteristics, creating a composite structure that optimizes both reliability and electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution improves the electrical properties and reliability of semiconductor memory devices, enabling increased integration and data storage capacity while reducing manufacturing costs by leveraging a vertical channel structure and specific dielectric layers.
Implementation Method 1
a diffusion stop layer between the gate electrodes and the charge storage layer
Implementation Method 2
The diffusion stop layer may include a dielectric material having a dielectric constant of greater than about 0 and less than about 5
Data Source
AI summary
Disclosed are 3D semiconductor memory devices and electronic systems including the same. The 3D semiconductor memory device comprises a stack structure including interlayer dielectric layers and gate electrodes that are alternately and repeatedly stacked on a substrate, vertical channel structures in vertical channel holes that penetrate the stack structure and each including a charge storage layer, a tunneling dielectric layer, and a vertical semiconductor pattern that are sequentially cover an inner sidewall of each of the vertical channel holes, and a diffusion stop layer between the gate electrodes and the charge storage layer. The diffusion stop layer includes a dielectric material having a dielectric constant of greater than about 0 and less than about 5.