3D Memory Cell Stack With Dual Storage Films for Higher Density
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Solution Overview
Problem
Existing semiconductor memory devices face limitations in increasing data storage capacity, necessitating a shift from two-dimensional to three-dimensional arrangements of memory cells to enhance capacity.
Innovation Solution
A semiconductor memory device with a stack structure comprising gate electrodes and a channel structure, including conductive pillars, channel films, and data storage films arranged in a three-dimensional configuration, utilizing ferroelectric or electrolyte films for data storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged in a two-dimensional manner, then the device structure is simple and easy to manufacture, but the data storage capacity is limited
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional arrangement by stacking multiple gate electrodes vertically to form a stack structure, with channel structures penetrating through the stacks. This dimensional change enables significantly increased storage capacity within the same footprint area while maintaining manufacturability through established semiconductor processing techniques.
2Quantity of substance
If memory cells are arranged in a three-dimensional manner, then the data storage capacity increases, but the manufacturing complexity increases
Solution Approach 1:
The three-dimensional memory structure is segmented into repeating modular units consisting of stack structures (with alternating gate electrodes and insulating layers) and channel structures. This segmentation allows the complex 3D architecture to be built using iterative deposition and etching processes, making manufacturing more manageable despite the increased dimensionality.
Solution Approach 2:
The patent implements a nested structure where channel structures are positioned within and penetrate through stack structures. The channel film is surrounded by data storage films, which are in turn surrounded by the stack structure. This nested arrangement maximizes space utilization and enables high-density storage while maintaining a systematic manufacturing approach.
3Quantity of substance
If multiple data storage films are used in the channel structure, then the data storage capacity and integration density increase, but the device complexity increases
Solution Approach 1:
Different data storage films are positioned at specific locations within the channel structure - a first data storage film between the conductive pillar and channel film, and a second data storage film between the gate electrodes and channel film. This local differentiation allows each film to perform optimized functions while the overall structure remains systematic and manufacturable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The three-dimensional arrangement significantly increases data storage capacity and integration density while maintaining efficient data storage and retrieval operations.
Implementation Method 1
the first data storage film includes at least one of a ferroelectric film or an electrolyte film
Implementation Method 2
the first data storage film includes at least one of a ferroelectric film or an electrolyte film
Data Source
AI summary
A semiconductor memory device includes: a substrate; a stack structure disposed on the substrate, wherein the stack structure includes a plurality of gate electrodes stacked on each other; and a channel structure disposed in the stack structure and penetrating the plurality of gate electrodes, wherein the channel structure includes: a conductive pillar extending in a first direction; a channel film disposed between the plurality of gate electrodes and the conductive pillar and extending in the first direction; a first interfacial film interposed between the conductive pillar and the channel film and extending in the first direction; a first data storage film interposed between the conductive pillar and the first interfacial film and extending in the first direction; and a second data storage film interposed between each of the gate electrodes and the channel film and extending in the first direction.