3D Memory Word Line Routing With Dual Staircase Structures
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Solution Overview
Problem
The existing two-dimensional non-volatile memory designs limit storage capacity, and as three-dimensional memory technology advances, the complexity of interconnections between three-dimensional memory and driving devices increases, making it challenging to efficiently manage storage capacity without significantly increasing footprint area.
Innovation Solution
The implementation of a three-dimensional memory device with staircase structures and a bidirectional word line routing scheme, where word lines are alternately routed to opposite sides of the device, allowing for independent routing and reducing the number of metallization layers required, thereby simplifying interconnections and enhancing storage capacity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional memory stacking is implemented to increase storage capacity, then storage capacity is improved, but interconnection complexity increases
Solution Approach 1:
The patent divides the memory device into multiple stacking structures, each with its own dedicated word line driving circuit. This segmentation allows independent routing and control of each stack, reducing the overall interconnection complexity while maintaining high storage capacity through vertical integration.
Solution Approach 2:
The patent transitions from two-dimensional planar interconnections to three-dimensional vertical stacking with bidirectional routing. Word lines are routed in opposite directions from staircase structures at opposite sides of the device, utilizing the third dimension to simplify interconnection paths and reduce metallization layer requirements.
2Adaptability or versatility
If more metallization layers are added to accommodate increased interconnections, then interconnection capability is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
Instead of routing all word lines in the same direction, the patent inverts the routing approach by sending word lines in opposite directions from staircase structures at opposite sides of the device. This bidirectional routing reduces the number of metallization layers needed while maintaining full interconnection capability.
Solution Approach 2:
The staircase structures serve multiple functions: they provide mechanical support, enable bidirectional word line routing, and facilitate independent connection to driving circuits. This multi-functionality reduces the need for additional dedicated structures, thereby reducing overall device complexity.
Data Source
AI summary
An integrated circuit is provided. The integrated circuit includes a three-dimensional memory device, a first word line driving circuit and a second word line driving circuit. The three-dimensional memory device includes stacking structures separately extending along a column direction. Each stacking structure includes a stack of word lines. The stacking structures have first staircase structures at a first side and second staircase structures at a second side. The word lines extend to steps of the first and second staircase structures. The first and second word line driving circuits lie below the three-dimensional memory device, and extend along the first and second sides, respectively. Some of the word lines in each stacking structure are routed to the first word line driving circuit from a first staircase structure, and others of the word lines in each stacking structure are routed to the second word line driving circuit from a second staircase structure.