3D Memory Stack Layout With Wider Edge Portions Against Block Tilting
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The high height-to-width ratio of stacked portions in 3D memory devices leads to a high risk of block tilting during formation, as the widths do not increase proportionally with the number of memory cell layers, affecting the quality and performance of the memory device.
Innovation Solution
Incorporating gate line slit structures that extend vertically through the stack structure, with at least one edge stack portion having a different configuration, such as a wider width or shape, to counteract pressure differences during fabrication processes and prevent tilting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of memory cell layers is increased to increase memory capacity, then the memory capacity is improved, but the height-to-width ratio of stacked portions increases causing block tilting during fabrication
Solution Approach 1:
The patent applies local quality by making edge stack portions have a different width than non-edge stack portions. Specifically, edge stack portions are configured to be wider than non-edge stack portions, creating local structural differences that compensate for the high height-to-width ratio and prevent block tilting during fabrication while maintaining high memory capacity through increased layer count
2Quantity of substance
If gate line slit structures are used to vertically divide the stack structure, then the memory capacity can be increased by adding more stack portions, but the structural complexity increases
Solution Approach 1:
The patent applies segmentation by using gate line slit structures to vertically divide the stack structure into multiple stack portions. This segmentation allows memory capacity to be increased by adding more stack portions while managing structural complexity through systematic division of the memory structure into repeating units
3Stability of the object's composition
If edge stack portions are given different configurations from non-edge portions, then block tilting is prevented, but the manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by configuring edge stack portions with different dimensions (wider width) compared to non-edge stack portions. This local differentiation prevents block tilting by providing structural support at critical edge locations, while the precision requirements are managed through focused control of specific edge region dimensions rather than uniform precision across the entire structure
Data Source
AI summary
Memory device and formation method are provided. The memory device includes a stack structure; and a plurality of gate line slit structures vertically extending through the stack structure to divide the stack structure into a plurality of stack portions. The plurality of GLS structures extend along a first direction in a lateral plane of the stack structure and are arranged along a second direction substantially perpendicular to the first direction. Each stack portion is between corresponding adjacent gate line slit structures. At least one edge stack portion, along the second direction of the plurality of stack portions at edge of the stack structure includes a configuration different from a non-edge stack portion of the plurality of stack portions along the second direction.