3D Semiconductor Memory Device Electrode Pad Positioning
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Solution Overview
Problem
Current three-dimensional semiconductor memory devices face challenges in achieving high integration and efficient signal transfer due to limitations in electrode design and connection structures, which affect performance and cost.
Innovation Solution
The proposed solution involves a three-dimensional semiconductor memory device with a substrate having a cell array region and a connection region, featuring an electrode structure with vertically stacked electrodes and mold patterns, where the pad portions of the electrodes are strategically positioned to overlap the mold patterns, allowing for increased signal transfer speeds and design flexibility through the use of contact plugs that supply operating voltages to opposite ends of the electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If electrodes are vertically stacked to increase integration, then device density is improved, but signal transfer speed deteriorates due to longer signal paths
Solution Approach 1:
The patent transitions from planar electrode arrangement to three-dimensional vertically stacked electrodes, utilizing the vertical dimension to increase integration density while managing signal path lengths through strategic pad portion positioning and contact plug connections
2Speed
If pad portions are positioned closer to the cell array region, then signal transfer speed is improved, but manufacturing precision deteriorates due to alignment difficulties
Solution Approach 1:
The pad portions of vertically stacked electrodes are nested to overlap each other in the vertical direction, creating a compact structure that maintains short signal paths while providing clear alignment references for manufacturing processes
Solution Approach 2:
Contact plugs serve as intermediary elements that connect the overlapping pad portions to connection lines, decoupling the alignment requirements between stacked electrodes and the connection network, thereby improving both signal speed and manufacturing precision
3Adaptability or versatility
If contact plugs are used to connect electrodes to connection lines, then design flexibility is improved, but device complexity increases
Solution Approach 1:
The contact plugs serve multiple functions: electrical connection between electrodes and connection lines, alignment reference for subsequent patterning steps, and structural support for the vertically stacked electrode configuration, thereby reducing overall device complexity despite the added connection elements
Data Source
AI summary
A three-dimensional semiconductor memory device including: a substrate including a cell array region and a connection region; and an electrode structure extending along a first direction from the cell array region to the connection region and is a plurality of electrodes vertically stacked OD the substrate, each of the electrodes including an electrode portion on the cell array region and a pad portion on the connection region, wherein the electrodes include a first electrode located at a first level from the substrate and a second electrode located at a second level from the substrate, the second level being higher than the first level, and the pad portion of the first electrode is closer to the cell array region than the pad portion of the second electrode.