3D Semiconductor Memory Channels With Separated Electrode Patterns
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The manufacturing process of three-dimensional semiconductor memory devices is complex and requires technologies to lower the difficulty level, particularly in arranging memory cells in three dimensions.
Innovation Solution
A semiconductor device is designed with a first stack structure comprising interlayer insulating layers and conductive patterns alternately stacked, along with channel structures and conductive patterns surrounding them. A method for manufacturing this device involves forming stack structures, creating openings to expose sacrificial layers, replacing these layers with conductive material, and forming separated conductive patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged in three dimensions to improve integration density, then integration density is improved, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is divided into separate sequential stages: first forming first conductive patterns around first channel structures, then forming second conductive patterns around second channel structures. This segmentation allows each stage to be completed independently, reducing the overall manufacturing complexity while maintaining the three-dimensional integrated structure.
Solution Approach 2:
The first conductive patterns and first channel structures are formed in advance before forming the second conductive patterns and second channel structures. This preliminary action establishes a foundation that simplifies subsequent manufacturing steps, as the first structure serves as a pre-configured element for the final three-dimensional assembly.
2Quantity of substance
If conductive patterns are formed surrounding channel structures in a three-dimensional arrangement, then integration density is improved, but manufacturing difficulty increases
Solution Approach 1:
The formation of conductive patterns is segmented into two distinct manufacturing processes: first conductive patterns are formed around first channel structures, and second conductive patterns are formed around second channel structures. This segmentation reduces manufacturing difficulty by breaking down the complex three-dimensional patterning into manageable sequential steps.
Solution Approach 2:
The first conductive patterns are formed as a preliminary step before forming the second conductive patterns. This preliminary formation simplifies the overall manufacturing process by establishing the first layer of conductive structures that will later be integrated with the second layer, reducing the complexity of forming all conductive patterns simultaneously.
Data Source
AI summary
A semiconductor device, and method of manufacturing a semiconductor device, includes second conductive patterns separated from each other above a first stack structure which is penetrated by first channel structures and enclosing second channel structures coupled to the first channel structures, respectively. Each of the second conductive patterns includes electrode portions stacked in a first direction and at least one connecting portion extending in the first direction to be coupled to the electrode portions.