3D Memory Cell Electrode Structure With High-k Layers for Reliability
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Solution Overview
Problem
The integration of semiconductor devices is limited by the area occupied by unit memory cells, and existing three-dimensional semiconductor devices face challenges in enhancing operational reliability and capacitance.
Innovation Solution
A semiconductor device structure incorporating high dielectric constant layers and specific electrode configurations, including plug-type and line-type electrodes, to increase capacitance and reliability, with capping layers to prevent metal migration and enhance manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If three-dimensional semiconductor device structure is adopted to improve integration, then area occupancy is reduced, but operational reliability deteriorates
Solution Approach 1:
The patent transitions from planar two-dimensional memory cell structures to three-dimensional stacked structures, where memory cells are arranged vertically across multiple layers. This dimensional change reduces the area occupied by each memory cell while maintaining functional integrity through careful design of vertical interconnections and stacked components.
Solution Approach 2:
The three-dimensional semiconductor device is divided into multiple discrete layers and stacked structures, with each layer performing specific functions. This segmentation allows independent optimization of each layer while collectively achieving high integration, and facilitates modular manufacturing and assembly processes.
2Ease of manufacture
If conventional insulating layers are used in three-dimensional structures, then manufacturing is simpler, but capacitance is insufficient
Solution Approach 1:
The patent changes the dielectric parameter by replacing conventional insulating materials with high dielectric constant (high-k) materials in specific layers. This parameter change increases the capacitance of capacitive structures without significantly complicating the manufacturing process, as the high-k materials can be deposited using standard thin-film deposition techniques.
Solution Approach 2:
The device employs composite material structures combining different dielectric materials with varying properties. Conventional insulating layers are used in regions where simple manufacturing is critical, while high-k dielectric layers are strategically placed where high capacitance is required, creating a composite structure that balances manufacturability and electrical performance.
3Area of stationary object
If electrode density is increased to improve integration, then area is reduced, but metal migration increases
Solution Approach 1:
The patent introduces capping layers as intermediary structures between metal electrodes and the surrounding environment. These capping layers act as protective barriers that prevent metal migration while allowing the electrodes to maintain high density. The capping layers are strategically positioned to protect vulnerable electrode regions without increasing the overall device area.
Solution Approach 2:
Protective capping layers are applied in advance to electrode structures before they are exposed to conditions that could cause metal migration. This beforehand protection prevents harmful effects from occurring, allowing high-density electrode arrangements to be implemented without the risk of migration-related failures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure increases capacitance and ensures a stable, reliable semiconductor device with improved integration and operational performance by leveraging high dielectric constant layers and optimized electrode arrangements.
Implementation Method 1
a first high dielectric constant layer having a dielectric constant higher than a dielectric constant of the first insulating layer
Data Source
AI summary
A semiconductor device includes: a first insulating layer, a plurality of first electrodes penetrating the first insulating layer, a plurality of second electrodes penetrating the first insulating layer, the plurality of second electrodes being located between the plurality of first electrodes: a first high dielectric constant layer having a dielectric constant higher than a dielectric constant of the first insulating layer, a plurality of third electrodes penetrating the first high dielectric constant layer, the plurality of third electrodes being respectively connected to the plurality of first electrodes, and a plurality of fourth electrodes penetrating the first high dielectric constant layer, the plurality of fourth electrodes being located between the plurality of third electrodes.