3D Memory Hole Structure With Variable Electrode Thickness
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Solution Overview
Problem
In three-dimensional memory devices, high aspect ratio memory holes with non-uniform diameters lead to variations in memory cell characteristics, making it difficult to control hole diameters uniformly, which affects memory cell performance.
Innovation Solution
A semiconductor device design featuring a stacked body with columnar parts having distinct diameters, where the charge storage film and semiconductor body extend in the stacking direction, with insulating films between the electrode layers, and the use of thicker and thinner electrode layers to manage electric fields and improve writing and deletion characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If anisotropic dry etching is used to form memory holes with high aspect ratios, then the memory device achieves higher integration density, but the diameters of the memory holes become non-uniform in the depth direction
Solution Approach 1:
The patent applies local quality by making the electrode layers have different thicknesses at different locations. Specifically, the first electrode layer has a first thickness and the second electrode layer has a second thickness that is different from the first thickness. This non-uniform electrode layer structure compensates for the non-uniform etching rates in high aspect ratio memory holes, maintaining uniform hole diameters throughout the depth direction while achieving high integration density.
2Ease of manufacture
If memory hole diameters are not uniformly controlled, then manufacturing becomes easier, but memory cell characteristics show variations
Solution Approach 1:
The patent changes the parameter of electrode layer thickness to control memory hole diameter uniformity. By setting the first electrode layer thickness and second electrode layer thickness to different values, the patent compensates for etching variations and maintains consistent hole diameters, thereby ensuring uniform memory cell characteristics while simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design helps to uniformly control memory hole diameters, reduces erroneous writing and reading due to electric field variations, and enhances the reliability and performance of memory cells by managing electric fields effectively across different portions of the memory device.
Implementation Method 1
The charge storage film and a semiconductor body extending in a staking direction of the stacked body are provided in the memory holes
Implementation Method 2
insulating films between the electrode layers
Data Source
AI summary
A semiconductor body device includes a stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending in a stacking direction of the stacked body through the electrode layers and having a pipe shape, a plurality of memory cells being provided at intersecting portions of the semiconductor body with the electrode layers, and a columnar insulating member extending in the stacking direction inside the semiconductor body having the pipe shape.