3D Memory Hydrogen Diffusion Barrier via Titanium Nitride
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Solution Overview
Problem
As three-dimensional memory devices scale down, hydrogen diffusion from hydrogen-containing layers can adversely affect peripheral CMOS transistors, increasing leakage current and degrading device performance.
Innovation Solution
A semiconductor structure with a silicon nitride diffusion barrier layer and titanium diffusion barrier structures is employed to form a continuous hydrogen diffusion barrier, preventing hydrogen from reaching peripheral devices without disrupting electrical continuity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen-containing layers are used in three-dimensional memory devices, then device functionality is achieved, but hydrogen diffusion increases leakage current and degrades peripheral CMOS transistor performance
Solution Approach 1:
A titanium diffusion barrier structure is introduced as an intermediary layer between the hydrogen-containing memory device layers and the peripheral CMOS transistors. This titanium layer acts as a mediator that blocks hydrogen diffusion while allowing the memory device to maintain its hydrogen-containing dielectric layers for proper functionality. The titanium barrier effectively mediates the interaction between hydrogen and peripheral devices, preventing harmful hydrogen migration.
Solution Approach 2:
The harmful hydrogen diffusion pathway is extracted and isolated from the peripheral CMOS transistors by removing hydrogen from the diffusion path through the use of a titanium barrier layer. This extraction of hydrogen from the potential diffusion path prevents it from reaching and degrading the peripheral devices, while the memory device itself retains its hydrogen-containing layers.
2Object-generated harmful factors
If a diffusion barrier layer is added to block hydrogen, then hydrogen diffusion is prevented, but device complexity and manufacturing steps increase
Solution Approach 1:
The diffusion barrier is applied locally only where hydrogen diffusion to peripheral devices is a concern, rather than throughout the entire device structure. The titanium barrier layer is strategically positioned between the memory array and peripheral CMOS transistors, providing hydrogen blocking only in the specific region where it is needed to protect peripheral devices, while leaving other areas unchanged.
3Object-generated harmful factors
If a diffusion barrier layer is added to block hydrogen, then hydrogen diffusion is prevented, but manufacturing process steps increase
Solution Approach 1:
The titanium diffusion barrier layer is formed preliminarily during the memory device fabrication process, before the peripheral CMOS transistors are fully assembled or before hydrogen diffusion can occur. By establishing the barrier layer in advance during the stacking process, the need for additional post-assembly barrier applications is eliminated, streamlining the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively blocks hydrogen diffusion, maintaining device performance and reducing leakage current in three-dimensional memory devices by creating a continuous hydrogen diffusion barrier.
Implementation Method 1
A semiconductor structure with a silicon nitride diffusion barrier layer and titanium diffusion barrier structures is employed to form a continuous hydrogen diffusion barrier, preventing hydrogen from reaching peripheral devices
Data Source
AI summary
A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.