3D Memory Interconnection Structure with Segmented Contact Plugs
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Solution Overview
Problem
The manufacturing of three-dimensional non-volatile memory devices is complicated by the varying depths of contact plugs, which can form bridges between word lines, making it difficult to achieve a stable and integrated structure.
Innovation Solution
An interconnection structure with stacked insulating and dielectric layers, and conductive layers surrounding the sidewalls of dielectric layers, where contact plugs are coupled to the conductive layers and partially pass through the dielectric layers, preventing bridge formation by ensuring the plugs do not overlap with lower conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If contact plugs are formed with varying depths to couple to stacked word lines, then the memory device can be manufactured with three-dimensional structure, but the manufacturing process becomes more difficult and bridges may form between word lines
Solution Approach 1:
The contact plug formation process is segmented into multiple steps: first forming contact plugs at a first depth to contact first word lines, then forming second contact plugs at a second depth to contact second word lines. This segmentation allows each contact plug type to be optimized independently, simplifying the overall manufacturing process while maintaining three-dimensional structure capability.
Solution Approach 2:
The first contact plugs are formed in advance before the second contact plugs. This preliminary action allows the deeper contact plugs to be established first, providing a stable foundation and reference structure for subsequent shallower contact plug formation, thereby reducing manufacturing complexity.
2Reliability
If contact plugs pass through word lines to reach lower layers, then connection to lower conductive layers is achieved, but bridges may form between conductive layers
Solution Approach 1:
Different contact plugs are designed with different depths according to their specific connection requirements. First contact plugs extend to a first depth to contact first word lines, while second contact plugs extend to a second depth to contact second word lines. This localized differentiation ensures reliable connections without unnecessary penetration that could cause bridge formation.
Solution Approach 2:
The word lines serve as intermediary structures between the contact plugs and the lower conductive layers. Contact plugs contact the word lines, which in turn are coupled to the conductive layers, providing an indirect connection path that prevents direct bridging between conductive layers while maintaining electrical connectivity.
Data Source
AI summary
An interconnection structure may include insulating layers stacked stepwise and dielectric layers interposed between the insulating layers. The interconnection structure may include conductive layers interposed between the insulating layers and surrounding sidewalls of the dielectric layers, respectively. The interconnection structure may include contact plugs each coupled to one of the conductive layers. The contact plugs may at least partially pass through the dielectric layers.