3D Memory Channels with Laterally Pegged Dielectric Cores
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Solution Overview
Problem
As three-dimensional memory devices scale, the challenge lies in maintaining structural support for vertical dielectric cores and semiconductor channels to prevent collapse, while enabling the formation of higher conductivity single crystalline semiconductor channels.
Innovation Solution
The implementation of laterally extending dielectric pegs that support vertical dielectric cores surrounded by semiconductor channels, formed through a method involving alternating stacks of insulating and sacrificial layers, memory openings, and epitaxial semiconductor channel growth, ensures structural integrity and conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional memory devices are scaled down, then device density is improved, but structural support for vertical dielectric cores and semiconductor channels deteriorates leading to collapse
Solution Approach 1:
The patent introduces laterally extending dielectric pegs that protrude from the vertical dielectric core into the semiconductor channel, adding a lateral dimensional component to the structural support system. This lateral extension provides mechanical anchoring that prevents collapse while maintaining vertical scaling for higher density.
Solution Approach 2:
The patent employs a composite structure combining dielectric materials (for the core and pegs) with semiconductor materials (for the channels). This composite approach allows the dielectric pegs to provide structural support while the semiconductor channels maintain electrical functionality, resolving the contradiction between structural integrity and device scaling.
2Ease of manufacture
If conventional memory structures are used, then manufacturing simplicity is maintained, but formation of higher conductivity single crystalline semiconductor channels is prevented
Solution Approach 1:
The patent forms dielectric pegs protruding into the channel space before the semiconductor channel is fully formed. This preliminary action creates a structural template that guides subsequent epitaxial growth, enabling single crystalline channel formation with high conductivity while maintaining a relatively simple manufacturing process.
Solution Approach 2:
The dielectric pegs serve as an intermediary structure during manufacturing, providing a physical template and structural framework that facilitates the formation of high-quality single crystalline semiconductor channels. The pegs are later removed or integrated, having served their purpose as manufacturing aids.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration provides additional structural support, allowing for the formation of higher conductivity single crystalline semiconductor channels and preventing the collapse of dielectric cores and channels, thereby enhancing the performance and reliability of three-dimensional memory devices.
Implementation Method 1
dielectric peg portions laterally extending from the dielectric pillar portion through one or more holes in the semiconductor channel and adjoined to respective side apertures
Implementation Method 2
forming an epitaxial semiconductor channel that is epitaxially aligned to the single crystalline semiconductor material layer within each of the channel cavities
Data Source
AI summary
A three-dimensional memory device includes a vertical semiconductor channel surrounding a vertical dielectric core. Laterally extending dielectric pegs structurally support the vertical semiconductor channel and the vertical dielectric core. The vertical semiconductor channel may be a single crystalline semiconductor channel.