3D Memory Contact-and-Support Assembly for Reliable Layer Vias
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Solution Overview
Problem
Existing three-dimensional memory devices face challenges in efficiently integrating contact-and-support assemblies, which are crucial for reliable electrical connections and structural support in monolithic memory arrays, leading to potential performance limitations and manufacturing complexities.
Innovation Solution
The integration of a dielectric support pillar and conductive layer contact via structure, along with a dielectric spacer, forms an integrated contact-and-support assembly within a contact via cavity, ensuring stable electrical connections and structural integrity in the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate contact structures and support structures are used, then structural support and electrical connection functions are achieved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent combines the contact structure and support structure into a single integrated contact-and-support assembly. The conductive layer contact via structure provides electrical connection while the dielectric support pillar provides structural support, both within one assembly unit. This merging reduces device complexity and manufacturing steps while maintaining reliable electrical connections.
2Device complexity
If integrated contact-and-support assemblies are used, then device complexity is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The integrated contact-and-support assembly is formed through segmented manufacturing steps: first forming the dielectric support pillar, then forming the conductive layer contact via structure around it, and finally adding the dielectric spacer. This segmentation of the manufacturing process allows for precise control at each step while achieving the integrated final structure, reducing the overall manufacturing precision burden.
3Ease of manufacture
If larger contact via cavities are used, then assembly integration is facilitated, but device area increases
Solution Approach 1:
The dielectric support pillar is positioned locally within the contact via cavity to provide targeted structural support where needed. The dielectric spacer is positioned locally at the interface between the contact via cavity and memory opening to provide localized separation. This local quality approach allows efficient use of space, facilitating assembly integration without requiring excessive cavity area.
Data Source
AI summary
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures including a vertical channel and memory elements located in the memory openings, a contact via cavity vertically extending through the alternating stack, and an integrated contact-and-support assembly located in the contact via cavity. The integrated contact-and-support assembly includes a dielectric support pillar and a conductive layer contact via structure electrically contacting a top surface of a first electrically conductive layer of the electrically conductive layers that surrounds the contact via cavity. A dielectric spacer is located in the contact via cavity, covering a sidewall of the first electrically conductive layer in the contact via cavity, and extending above the top surface of the first electrically conductive layer.