3D Memory Leakage Control via Group Segmentation
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Solution Overview
Problem
In three-dimensional memory devices with cross-point cell arrays, leakage current from defective cells across layers can cause malfunction and increased power consumption, limiting the effectiveness of multi-layer configurations due to shared signal wirings.
Innovation Solution
The memory device divides the three-dimensional cell arrays into three or more groups, with the group selection circuit configuring some groups to allow leakage current and others to remain inactive, using reverse-biased diodes and inactive states to minimize leakage current impact during selection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If signal wirings are shared between laminated cell array layers, then device complexity is reduced and manufacturing is simplified, but leakage current from defective cells causes malfunction and increased power consumption
Solution Approach 1:
The patent divides the laminated cell arrays into three or more groups, where each group can be independently selected and controlled. This segmentation allows the system to isolate defective cells within specific groups while maintaining shared signal wirings across layers, thereby reducing leakage current effects without increasing overall structural complexity
Solution Approach 2:
The patent applies different selection states to different groups of cell arrays - some groups are selected while others are not selected. This local differentiation allows signal wirings to be shared globally while locally controlling which layers are active, thereby managing leakage current at the group level rather than requiring complete isolation of all layers
2Ease of manufacture
If signal wirings are shared between laminated cell array layers, then ease of manufacture is improved, but power consumption increases due to leakage current
Solution Approach 1:
By segmenting cell arrays into selectable groups, the patent enables the manufacturing system to maintain simple shared signal wiring structures while operationally controlling power consumption through selective activation of groups, reducing leakage current effects without complicating the manufacturing process
Solution Approach 2:
The patent changes the operational parameter of signal wirings by selectively enabling or disabling specific groups of cell arrays. This allows the same physical wiring structure to operate with different power consumption characteristics depending on which groups are active, thereby managing power usage without altering the manufactured structure
3Adaptability or versatility
If cell arrays are configured as cross-point cell arrays with shared signal wirings, then adaptability is improved, but leakage current effects become pervasive across layers
Solution Approach 1:
The patent segments the cross-point cell arrays into multiple selectable groups, allowing the system to maintain the adaptable cross-point configuration while controlling leakage current by selectively activating only the necessary groups rather than all layers simultaneously
Solution Approach 2:
The patent applies different selection states to different groups, creating local quality differences where selected groups are active and non-selected groups are inactive. This allows the cross-point configuration to maintain its versatility while locally suppressing leakage current in non-selected groups
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the effects of leakage current, enhancing the reliability and efficiency of the memory device by selectively managing the states of memory cells across layers, thereby maintaining higher capacity and lower power consumption.
Implementation Method 1
when selecting one of these groups, memory cells in some of the remaining groups being biased so that a leakage current flows therethrough, while memory cells in the rest of the remaining groups being biased so that a leakage current does not flow therethrough
Data Source
AI summary
A three-dimensional memory device includes: a plurality of mats laminated therein, each having memory cells arranged in a two-dimensional manner; and access signal lines and data lines to select memory cells in each mat being shared between respective adjacent mats. Laminated mats are divided into three or more groups. When selecting one of these groups, memory cells in some of the remaining groups are biased so that a leakage current flows therethrough, while memory cells in the rest of the remaining groups are biased so that a leakage current does not flow therethrough.