3D Nonvolatile Memory Gate Stack With Metal Gates and Supporters
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Solution Overview
Problem
Current three-dimensional nonvolatile memory devices face challenges in reducing gate electrode resistance and preventing process defects, which affect their operation speed and reliability.
Innovation Solution
The solution involves a nonvolatile memory device design with gate electrodes made of metal materials, such as tungsten, aluminum, or tantalum, and the use of supporters formed of dielectric or semiconductor materials to penetrate and support the gate electrodes, along with a method that includes alternating dielectric layers and etch processes to form stacked structures and conductive patterns, reducing resistance and preventing interlayer dielectric collapse during fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If gate electrodes are made of conventional materials in three-dimensional stacked structures, then device complexity is reduced, but gate electrode resistance increases and operation speed decreases
Solution Approach 1:
The patent changes the material parameter of gate electrodes from conventional polysilicon to metal materials (tungsten, aluminum, or tantalum), fundamentally altering the electrical resistance characteristic. This material substitution directly reduces gate electrode resistance and improves operation speed without increasing device complexity, as the metal gate structure maintains compatibility with existing three-dimensional stacked architectures.
2Ease of manufacture
If alternating dielectric layers are removed during fabrication, then conductive patterns are formed, but interlayer dielectric collapse occurs
Solution Approach 1:
The patent applies preliminary support structures to the alternating dielectric layers before the removal process. These support structures are formed in advance to prevent collapse during subsequent etching and material removal steps. The supports are strategically positioned to maintain structural integrity throughout the fabrication process, enabling successful formation of conductive patterns without dielectric layer failure.
3Reliability
If supporters are introduced to support gate electrodes, then process defects are prevented, but device structure becomes more complex
Solution Approach 1:
The patent introduces supporter structures as intermediary elements during the fabrication process. These supporters act as temporary mediators that provide mechanical support to alternating dielectric layers and emerging conductive patterns during critical fabrication steps. The supporters are designed to be removed or integrated into the final structure, serving their protective function without permanently increasing device complexity.
Data Source
AI summary
A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.