3D Memory Device O-Shaped Opening Vertical Channel Architecture
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Solution Overview
Problem
Current 3D memory devices face challenges in achieving higher storage density within smaller sizes without compromising operation performance, as critical dimensions shrink and traditional memory cell technologies struggle to maintain performance with reduced cell sizes.
Innovation Solution
A 3D memory device is fabricated using a multi-layer stacking structure with O-shaped openings, filled with dielectric and conductive materials to form U-shaped memory cell strings, which increases channel width and allows for more cells in a smaller area, eliminating the need for conductive contact pads and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If traditional memory cell technologies are used with shrinking critical dimensions, then device size is reduced, but storage density and operation performance deteriorate
Solution Approach 1:
The patent transitions from planar 2D memory cell architecture to a 3D vertical channel architecture with multi-layer stacking structure. The memory cells are arranged in three dimensions with vertical channels extending through multiple stacked layers, enabling significantly higher storage density within a smaller footprint by utilizing the third dimension (height) for data storage capacity expansion.
Solution Approach 2:
The patent implements a nested structure where multiple memory cell layers are stacked vertically, with each layer containing memory cells that are nested within the overall 3D structure. The vertical channels pass through multiple stacked layers, creating a nested configuration that maximizes storage capacity within the available volume.
2Quantity of substance
If critical dimensions are shrunk to increase storage capacity, then more cells can be packed, but operation performance deteriorates
Solution Approach 1:
By moving to vertical channel architecture, the patent achieves higher storage capacity without proportionally reducing channel dimensions. The vertical orientation allows for longer channel lengths while maintaining adequate channel width, preserving carrier transport performance while increasing the number of cells that can be packed in a given area.
Solution Approach 2:
The patent changes the geometric parameters of the memory cell structure, specifically transitioning from horizontal to vertical channel orientation. This parameter change allows for optimized channel length and width dimensions that maintain good electrical performance while enabling higher cell density through the multi-layer stacking approach.
3Ease of manufacture
If conventional fabrication processes are used for 3D memory devices, then manufacturing is straightforward, but device complexity and manufacturing cost increase
Solution Approach 1:
The fabrication process is segmented into distinct modular steps: forming the multi-layer stacking structure with alternating conductive and insulating layers, creating O-shaped openings through selective etching, depositing memory structure layers on the sidewalls and bottoms of openings, and forming isolation bodies. Each segment can be independently optimized and controlled, managing the complexity of the overall 3D fabrication process.
Solution Approach 2:
The patent performs preliminary actions by first establishing the multi-layer stacking structure with conductive and insulating layers before forming the memory cells. The O-shaped openings are pre-formed through the stacked layers, and memory structure layers are deposited in advance on the sidewalls and bottoms, simplifying subsequent assembly and reducing process complexity.
Data Source
AI summary
A 3D memory device includes a multi-layers stacking structure having an O-shaped opening; a memory structure layer having a first string portion and a second string portion disposed on two opposite sides of a sidewall of the O-shaped opening and a connection portion disposed on a bottom of the O-shaped opening and connecting the first and the second string portion; a dielectric pillar disposed in the O-shaped opening and over the connection portion; an isolation body extending along a direction and embedded among the first string portion, the second string portion and the connection portion to isolate the first string portion from the second string portion; a first contact disposed in a first recess defined by the first string portion, the dielectric pillar and the isolation body; and a second contact disposed in a second recess defined by the second string portion, the dielectric pillar and the isolation body.