3D Memory Cell Layout With Overlapping Contacts for Dense Integration
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Solution Overview
Problem
Semiconductor memory devices face challenges in achieving high integration density and reduced process complexity, particularly in miniaturized circuit patterns.
Innovation Solution
The semiconductor memory device design incorporates a specific arrangement of wire patterns and gate lines with overlapping contacts and recess capping patterns, enhancing integration density and reducing manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-gate transistors are used to increase integration density, then the number of semiconductor memory devices in the same area increases, but the circuit patterns become more miniaturized and process complexity increases
Solution Approach 1:
The patent introduces a vertical dimension by stacking wire patterns (first wire pattern and second wire pattern) at different heights above the substrate. This three-dimensional arrangement allows more transistors to be packed in the same planar area, increasing integration density while managing the complexity through systematic vertical layering rather than purely two-dimensional miniaturization
2Quantity of substance
If circuit patterns are miniaturized to increase integration density, then more devices fit in the same area, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the wire patterns into distinct first and second wire patterns positioned at different vertical levels. This segmentation allows each layer to be manufactured and processed independently with standard precision techniques, while the combined structure achieves higher integration density. The separation into discrete layers simplifies the manufacturing precision requirements compared to creating uniformly miniaturized two-dimensional patterns
Data Source
AI summary
A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area;, a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.