3D Memory Support Pillars With Variable Widths Against Pattern Collapse
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Solution Overview
Problem
Existing three-dimensional memory devices face challenges in efficiently manufacturing memory devices with varying support pillar widths, which affects the structural integrity and performance of the memory device.
Innovation Solution
A three-dimensional memory device is designed with alternating stacks of insulating and conductive layers, featuring lateral isolation trenches and support pillar structures of different widths. The method involves forming memory openings, filling them with memory elements, and creating support openings that are laterally expanded to form dielectric support pillar structures of specific widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform width support pillar structures are used in existing three-dimensional memory devices, then the manufacturing process is simpler, but the structural integrity and performance are compromised due to inability to accommodate varying support requirements
Solution Approach 1:
The patent applies local quality by implementing support pillar structures with different widths at different locations within the same memory device. Specifically, first support pillar structures have a first width while second support pillar structures have a second width that is narrower than the first width. This allows each region to have optimized structural support according to its specific requirements, improving overall structural integrity without requiring a completely complex manufacturing process.
2Manufacturing precision
If varying support pillar widths are implemented to improve structural support, then pattern collapse is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the support pillar structures into multiple types based on width. First support pillar structures with a first width and second support pillar structures with a second width are created in different regions. This segmentation allows the manufacturing process to target specific areas with specific width requirements, reducing pattern collapse in critical regions while maintaining ease of manufacture through region-specific optimization rather than uniform complex processing.
Data Source
AI summary
A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers, forming memory openings through the alternating stack, forming memory opening fill structures in the memory openings, forming a first support opening and a second support opening through the alternating stack, laterally expanding the first support opening without expanding the second support opening, forming a first dielectric support pillar structure and a second dielectric support pillar structure in the laterally-expanded first support opening and in the second support opening, respectively, and replacing the sacrificial material layers with electrically conductive layers. Each of the memory opening fill structures includes vertical semiconductor channel and a respective vertical stack of memory elements.