3D Memory Stack Channel Structure With Rounded Corners
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Solution Overview
Problem
The integration limits of two-dimensional non-volatile memory elements have been reached, necessitating the development of three-dimensional structures, which face challenges in enhancing operation reliability and efficiency.
Innovation Solution
A semiconductor device with a stack of alternately stacked conductive and insulating films featuring rounded corners and channel structures with curved surfaces, along with conductive pads and channel films, is designed to improve structural stability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If two-dimensional non-volatile memory elements are used, then manufacturing is simpler, but integration density reaches a limit
Solution Approach 1:
The patent transitions from two-dimensional memory elements to three-dimensional stacked memory cells, where multiple memory layers are vertically stacked on the substrate. This dimensional change enables higher integration density by utilizing the vertical space above the substrate rather than only the planar area.
Solution Approach 2:
The memory device is divided into multiple stacked layers including alternating conductive films and insulating films, with each layer serving specific functions. This segmentation allows for increased integration density while maintaining manufacturability through modular layer-by-layer fabrication.
2Productivity
If three-dimensional stacked memory cells are implemented, then integration density improves, but operation reliability deteriorates
Solution Approach 1:
The patent introduces rounded corners at the intersections of the opening and stacked layers, replacing sharp 90-degree angles with curved surfaces. This curvature reduces stress concentration and improves the structural reliability of the three-dimensional stacked memory cells, addressing the reliability deterioration issue.
Solution Approach 2:
The rounded corner structure acts as a preemptive measure to cushion against stress concentration that would otherwise occur at sharp corners. By designing the structure with curvature from the beginning, the patent prevents potential failure points before they can develop into reliability issues.
3Ease of manufacture
If sharp corners are used in stacked structure, then manufacturing is easier, but stress concentration increases
Solution Approach 1:
The patent applies curvature to the corners of the stacked structure, replacing sharp angles with rounded surfaces. This design choice reduces stress concentration while maintaining ease of manufacture through standard fabrication processes that can accommodate rounded features.
4Manufacturing precision
If uniform channel film thickness is maintained, then manufacturing precision is good, but junction overlap uniformity deteriorates with sharp corners
Solution Approach 1:
The rounded corner structure provides a gradual transition that maintains uniform channel film thickness deposition while ensuring consistent junction overlap. The curvature allows the channel film to conform uniformly to the underlying structure, preventing variations that would occur at sharp corner intersections.
Data Source
AI summary
A semiconductor device includes a stack including alternately stacked conductive films and insulating films, wherein the stack includes an opening penetrating the conductive films and the insulating films, and wherein the stack includes a rounded corner that is exposed to the opening. The semiconductor device also includes a first channel film formed in the opening and including a first curved surface surrounding the rounded corner. The semiconductor device further includes a conductive pad formed in the opening, and a second channel film interposed between the first curved surface of the first channel film and the conductive pad.