3D Memory Seal Ring for Compact Footprint

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional seal ring structures for semiconductor chips require a dedicated field region around the entire periphery, increasing the chip footprint and not providing a compact design.

Innovation Solution

A three-dimensional memory device with a seal ring configuration that encloses the memory stack structures laterally, using alternating stacks of insulating and dielectric material layers, and forming seal ring structures that are laterally spaced from and contact the sidewalls of these stacks, thereby reducing the overall chip footprint.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional seal ring structure is used around the entire periphery of the semiconductor chip, then the device provides protection from ambient and contaminants, but the chip footprint increases

Engineering Contradiction:
Improveprotection from ambient and contaminantsVSAvoidchip footprint
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The seal ring structure is segmented and integrated within the alternating stacks of insulating and dielectric material layers, rather than forming a continuous peripheral structure. This segmentation allows the seal ring to be distributed throughout the device structure, providing protection without requiring additional peripheral space.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The seal ring structure is nested within the alternating stacks of insulating and dielectric material layers. The seal ring is formed as part of the internal structure of the device, utilizing the space within the existing layer configuration rather than adding external perimeter structures.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Reliability

If a dedicated field region is allocated around the entire periphery of the chip, then the seal ring can be properly formed, but space utilization is reduced

Engineering Contradiction:
Improveseal ring integrityVSAvoidspace utilization
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The alternating stacks of insulating and dielectric material layers serve multiple functions: they provide electrical isolation, structural support, and simultaneously form the seal ring structure. This multi-functionality eliminates the need for dedicated field regions, as the same structural elements fulfill multiple protective and functional roles.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The seal ring function is merged with the alternating stacks of insulating and dielectric material layers. Rather than being separate components, the seal ring is formed as an integral part of the alternating stack structure, combining protective sealing with electrical isolation and mechanical support functions.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS10115681B1Compact three-dimensional memory device having a seal ring and methods of manufacturing the same
Publication Date: 2018.10.30 SANDISK TECHNOLOGIES LLC
  • US10115681B1 patent drawing
  • US10115681B1 patent drawing
  • US10115681B1 patent drawing

AI summary

A semiconductor die includes a pair of first alternating stacks of first portions of insulating layers and electrically conductive layers located over a semiconductor substrate, groups of memory stack structures vertically extending through a respective one of the pair of the first alternating stacks, a pair of second alternating stacks of second portions of the insulating layers and dielectric material layers laterally adjoined to a respective one of the first alternating stacks, such that each second portion of the insulating layers is connected to a respective one of the first portions of the insulating layers, and at least one seal ring structure laterally enclosing, and laterally spaced from, the pair of first alternating stacks, and contacting at least a first sidewall of each of the pair of second alternating stacks.