3D Memory Block Separation Layout for Stacked Gate Defect Control
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Solution Overview
Problem
As the number of stacked gate electrodes in semiconductor devices increases, so do unexpected defects, hindering the development of highly-integrated three-dimensional semiconductor devices.
Innovation Solution
A three-dimensional semiconductor device design incorporating main separation structures and extended regions with varying separation distances and stacked structures, including word lines and data storage regions, to enhance integration and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of stacked gate electrodes is increased to achieve high integration, then the integration density is improved, but the number of unexpected defects increases
Solution Approach 1:
The patent divides the continuous gate electrode structure into multiple segments separated by main separation structures. This segmentation allows independent processing and reduces defect propagation across the entire structure, enabling higher integration while maintaining reliability by isolating potential failure points.
Solution Approach 2:
The patent introduces main separation structures as intermediary elements between stacked gate electrodes. These separation structures act as mediators that reduce stress accumulation and prevent defect formation in highly integrated stacked configurations, thereby enabling increased integration density without proportionally increasing defects.
2Device complexity
If the distance between main separation structures is reduced to increase integration, then the device complexity is reduced, but the manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The patent applies different separation distances between main separation structures in different regions of the device. Extended regions have larger separation distances that are easier to manufacture with standard precision, while memory block regions have smaller separation distances for higher integration. This local differentiation allows reduced overall device complexity while maintaining manufacturing precision in critical areas.
3Reliability
If extended regions with larger separation distances are introduced to reduce defects, then the reliability is improved, but the area of the device increases
Solution Approach 1:
The patent utilizes vertical stacking of gate electrodes in the third dimension to achieve high integration density, allowing the memory blocks to occupy smaller planar area. Extended regions with larger separation distances are positioned peripherally, utilizing space that would otherwise be unused. This dimensional approach reduces the overall device area while maintaining reliability through strategic placement of defect-reducing structures.
Data Source
AI summary
A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.