3D Memory Stack Sidewall Gate Layout for Leakage Control

The patent divides the vertical stack into multiple memory cell layers separated by intermediate insulating layers. Each memory cell layer is segmented with channel layers and memory layers alternately stacked, creating discrete functional units. This segmentation reduces leakage currents by isolating charge storage regions and prevents electric field concentration between adjacent memory cells, thereby maintaining operational reliability while achieving high integration density through vertical stacking.

The patent introduces intermediate insulating layers between adjacent memory cell layers in the vertical stack. These intermediate layers act as mediators that electrically isolate charge storage regions of different memory cells, preventing leakage currents from propagating vertically. The intermediate insulating layers also serve as charge blocking layers that concentrate electric fields at specific interfaces, thereby improving operational reliability while enabling continued vertical scaling for integration density.

The patent extracts the charge storage function into separate memory layers that are spatially separated from the channel layers by insulating layers. This extraction creates physical distance between charge injection regions and charge storage regions, reducing direct leakage paths. The memory layers are positioned at specific vertical locations within the stack, allowing charge to be stored remotely from the channel, thereby reducing leakage currents while maintaining high integration density through the vertical arrangement.

The patent incorporates intermediate insulating layers and charge blocking layers in advance within the vertical stack structure, before operation. These layers serve as preventive measures that block leakage current paths before they can develop. The insulating layers are positioned at strategic locations to cushion against electric field penetration and prevent charge leakage between adjacent memory cells, thereby maintaining low leakage currents even as the vertical stack height increases for higher integration density.

The patent transitions from a planar two-dimensional memory structure to a three-dimensional vertical stack structure. Memory cells are arranged along the vertical dimension with channel layers and memory layers alternately stacked. This dimensional change allows integration density to increase vertically without increasing lateral electric field concentration. The vertical stacking distributes electric field stress across multiple layers separated by insulating materials, thereby managing electric field concentration while achieving high integration density through the third dimension.

The patent implements a nested structure where memory layers are positioned within and between channel layers in a vertical sequence. Each memory layer is nested at a specific vertical position relative to adjacent channel layers, creating a compact multi-layer configuration. This nesting arrangement allows efficient use of vertical space for high integration density while the insulating layers between nested components prevent electric field concentration from building up, as each nested interface is electrically isolated.