3D Memory Source-Line Segmentation for Word-Line Isolation
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Solution Overview
Problem
Existing three-dimensional memory devices face challenges in efficiently isolating and connecting word lines and source layers, leading to potential electrical interference and reduced performance.
Innovation Solution
The implementation of laterally separated source lines is achieved by forming a sequence of source layer segments and source isolation dielectric structures, followed by alternating sequences of insulating and sacrificial material layers, which are then replaced with electrically conductive layers to create isolated and connected word lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If source lines are continuously connected in three-dimensional memory devices, then electrical connectivity is improved, but electrical interference between adjacent word lines increases
Solution Approach 1:
The source layer is divided into multiple discrete source layer segments separated by source isolation dielectric structures. This segmentation allows adjacent source line segments to be electrically isolated while maintaining connectivity within each segment, thereby reducing electrical interference between adjacent word lines while preserving necessary electrical connectivity.
2Reliability
If source layer segments are laterally separated by source isolation dielectric structures, then electrical isolation is improved, but device complexity increases
Solution Approach 1:
Source isolation dielectric structures are introduced as intermediary elements between adjacent source layer segments. These dielectric structures serve as mediators that provide electrical isolation while allowing the overall device architecture to maintain a relatively simple and scalable configuration, avoiding excessive complexity.
3Reliability
If alternating sequences of insulating and sacrificial material layers are formed, then word line connectivity control is improved, but manufacturing complexity increases
Solution Approach 1:
Alternating sequences of insulating material layers and sacrificial material layers are formed in advance before final word line connectivity establishment. This preliminary action allows for controlled replacement of sacrificial materials with conductive materials, enabling precise connectivity control while organizing the manufacturing process into manageable sequential steps.
Data Source
AI summary
A memory device includes a first memory block containing first word lines and a first source layer segment, and a second memory block containing second word lines and a second source layer segment which is electrically isolated from the first source layer segment. The first word lines in the first memory block are electrically connected to the respective second word lines in the second memory block.


