3D Memory Stack Contact Layout for Higher Density and Reliability
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity and reliability.
Innovation Solution
A semiconductor device with a three-dimensional arrangement of memory cells, incorporating a stack structure with alternating gate layers and insulating layers, and gate contact plugs that penetrate through these structures to enhance integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a three-dimensional stack structure with alternating gate layers and insulating layers is used, then data storage capacity increases, but device complexity increases
Solution Approach 1:
The patent transitions from traditional two-dimensional planar memory cell arrangements to a three-dimensional vertical stack structure. Multiple gate layers (first gate layer, second gate layer, third gate layer) are stacked vertically with insulating layers between them, enabling data storage capacity to scale with the number of stacked layers rather than being constrained by planar area. This dimensional transition directly resolves the contradiction by increasing storage capacity through vertical stacking while managing the inherent complexity through systematic layering.
Solution Approach 2:
The memory device is segmented into multiple functional gate layers (first gate layer for bit line control, second gate layer for word line control, third gate layer for additional control) stacked vertically, with each layer serving specific control functions. The insulating layers segment the conductive elements vertically, allowing independent control of each memory cell layer. This segmentation enables high storage capacity through multiple controllable layers while organizing the complexity into manageable, functionally-distinct segments.
2Productivity
If gate contact plugs penetrate through multiple stacked structures, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The gate contact plugs are formed to penetrate through the complete stack structure (first structure, second structure, third structure) in advance, establishing vertical electrical connections before subsequent processing steps. The contact plugs are preliminarily positioned to align with the vertically-stacked gate layers, ensuring that high-density interconnections are established early in the manufacturing process. This preliminary formation of through-stack contacts enables high integration density while managing alignment precision requirements by establishing connections before later processing steps that might introduce misalignment.
Data Source
AI summary
A semiconductor device may include a first stack structure including first gate layers and first insulating layers alternately stacked, a first lower pad capping pattern penetrating through a first portion of the first stack structure, a first upper pad capping pattern penetrating through a first portion of the first stack structure, a first buffer capping pattern penetrating through a third portion of the first stack structure, and a second stack structure disposed on the first stack structure, the first lower pad capping pattern, the first upper pad capping pattern, and the first buffer capping pattern, and including second gate layers and second insulating layers alternately stacked. A thickness of the first lower pad capping pattern may be greater than a thickness of the first upper pad capping pattern. A thickness of the first buffer capping pattern may be smaller than the thickness of the first lower pad capping pattern.