3D Memory Staircase Support Structure for Stress Relief
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Solution Overview
Problem
Existing 3D NAND memory devices face challenges with stress distribution and support structure density, leading to bending of conductive layers and potential short circuits due to the limited space occupied by gate lines slits and contact plugs in the staircase region.
Innovation Solution
The implementation of a bead-embedded strip shape support structure in the staircase region of 3D memory devices, which reduces stress concentration by breaking elongated seams into shorter pieces and distributes stress effectively through the Prince Rupert's Drop effect, thereby enhancing the structural integrity and reducing the risk of crack formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional support structures are used in the staircase region, then the space is occupied by gate lines slits and contact plugs, but stress concentration occurs leading to bending of conductive layers and potential short circuits
Solution Approach 1:
The support structure is divided into multiple segments: a first support structure with a first portion extending along a first direction and a second portion protruding along a second direction perpendicular to the first direction. This segmentation allows the support structure to provide comprehensive stress distribution without occupying excessive space, resolving the contradiction between reliability and device complexity.
Solution Approach 2:
The support structure extends in multiple directions (first direction and second direction perpendicular thereto), utilizing two-dimensional spatial arrangement instead of simple linear support. This dimensional approach enables effective stress distribution across the staircase region while maintaining compact design, addressing both reliability and complexity concerns.
2Reliability
If elongated seams are present in support structures, then stress concentration occurs, but breaking them into shorter pieces increases structural complexity
Solution Approach 1:
The support structure is segmented into multiple portions (first portion and second portion) that protrude in different directions. This segmentation breaks potential elongated seams into shorter segments, reducing stress concentration and crack propagation risk while maintaining a manageable geometric complexity through systematic arrangement.
Solution Approach 2:
The support structure has different portions with different orientations (first portion along first direction, second portion protruding along second direction). This local quality variation optimizes stress distribution at different locations, preventing stress concentration along any single elongated path while keeping the overall structure relatively simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The bead-embedded strip shape support structure effectively reduces stress concentrations and minimizes the risk of crack formation, leading to improved mechanical support for conductive layers and enhanced reliability of the 3D memory devices.
Implementation Method 1
distributes stress effectively through the Prince Rupert's Drop effect
Data Source
AI summary
In certain aspects, a three-dimensional (3D) memory device includes a stack structure including a core region and a staircase region, a channel structure extending through the stack structure in the core region, and a first support structure extending through the stack structure in the staircase region. The first support structure includes a first portion extending along a first direction and a second portion protruding from the first portion along a second direction perpendicular to the first direction. The first support structure is located between two blocks of the 3D memory device.