3D Memory Device Support Structures Prevent Structural Collapse
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional 3D memory devices face manufacturing challenges due to distortion and collapse of their three-dimensional structure, particularly in high aspect-ratio geometries, which limits storage density and integration.
Innovation Solution
A 3D memory device with a support structure and manufacturing method that includes forming conductive line layers and support structures of different materials, where the support structures are created through an etching process with high selectivity to prevent distortion and collapse, using materials like insulating or dielectric materials, and shaping them into various forms such as pillars or wave structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the integration of 3D memory devices is improved to achieve higher storage density, then the storage capacity increases, but the three-dimensional structure experiences distortion and collapse due to high aspect-ratio geometry
Solution Approach 1:
The patent introduces support structures as separate elements between conductive line layers, dividing the continuous structure into segmented sections. These support structures are formed by removing portions of sacrificial layers, creating discrete support elements that prevent distortion and collapse while allowing the conductive lines to maintain their vertical arrangement for high storage density.
Solution Approach 2:
The patent uses sacrificial layers as intermediary materials that are temporarily present during fabrication and then selectively removed. These sacrificial layers serve as mediators to create support structures between conductive line layers, enabling the formation of stable three-dimensional structures with high aspect ratios without causing distortion or collapse during the manufacturing process.
2Quantity of substance
If the aspect ratio of the three-dimensional structure is increased to improve vertical stacking, then the storage density increases, but the manufacturing precision deteriorates due to distortion and collapse
Solution Approach 1:
The patent performs preliminary actions by forming sacrificial layers and support structures before finalizing the conductive line structure. The support structures are prepared in advance between conductive line layers to prevent distortion during subsequent processing steps, ensuring manufacturing precision is maintained even with high aspect-ratio vertical stacking for increased storage density.
Solution Approach 2:
The patent changes material parameters by using different materials for conductive lines and support structures, and by controlling the removal of sacrificial layers. This parameter change approach allows precise control over the formation of support structures, maintaining manufacturing precision while enabling high aspect-ratio geometries for improved storage density.
3Quantity of substance
If conventional 3D vertical gate framework is used to achieve higher storage density, then the integration improves, but the manufacturing complexity increases due to distortion and collapse issues
Solution Approach 1:
The patent extracts and removes portions of sacrificial layers to form support structures, taking out the problematic continuous sacrificial material and replacing it with discrete support elements. This extraction approach simplifies the manufacturing process by eliminating the need to manage continuous sacrificial layers that cause distortion, while still achieving high storage density through vertical stacking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents distortion and collapse of the 3D memory device structure, enabling higher storage density and integration by providing structural support between conductive lines, thereby enhancing the reliability and performance of the memory device.
Implementation Method 1
A portion of the support material layers is removed through the openings by performing an etching process, so as to form a plurality of support structures between the first conductive line layers
Data Source
AI summary
Provided is a memory device including a plurality of first conductive line layers, a plurality of support structures, and a charge storage layer. Each of the first conductive line layers extends along a plane defined by a first direction and a second direction. Each of the first conductive line layers includes a plurality of first conductive lines extending along the first direction. The support structures are located between the adjacent first conductive line layers. The charge storage layer covers upper surfaces, lower surfaces, and two side surfaces of the first conductive lines and surfaces of the support structures.