3D Semiconductor Memory Vertical Transistor Integration
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving higher integration and capacity while minimizing size, as traditional planar transistor structures limit the degree of integration needed for advanced electronic products.
Innovation Solution
A three-dimensional semiconductor memory device design featuring gate electrodes and mold insulation layers alternately stacked on a substrate, with a channel structure passing through these layers and a gate dielectric layer, allowing for increased integration by utilizing a vertical transistor structure and recesses in the substrate with varying widths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a traditional planar transistor structure is used, then the device structure is simple and easy to manufacture, but the degree of integration is limited
Solution Approach 1:
The patent transitions from a planar (2D) transistor structure to a vertical (3D) transistor structure by extending the channel, gate electrode, and insulation layer vertically through the substrate. This dimensional change enables multiple memory cells to be stacked in the vertical direction, significantly increasing the degree of integration while maintaining manufacturability through established semiconductor fabrication processes.
2Productivity
If the degree of integration is increased using vertical transistor structure, then higher capacity is achieved, but the device structure becomes more complex
Solution Approach 1:
The vertical transistor structure is segmented into distinct functional layers including the channel layer, gate dielectric layer, mold insulation layers, and gate electrodes. Each layer performs a specific function and can be independently optimized and manufactured, which manages the overall device complexity while enabling high integration through vertical stacking.
Solution Approach 2:
The patent employs a nested structure where the gate dielectric layer is positioned between the channel layer and gate electrode, mold insulation layers surround the gate electrodes, and the entire vertical stack is embedded in the substrate. This nested arrangement compactly integrates multiple functional elements in the vertical dimension, achieving high integration without excessive complexity.
3Productivity
If vertical transistor structure is implemented, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms the channel layer, gate dielectric layer, and mold insulation layers in a predetermined sequence before introducing the gate electrodes. This preliminary action establishes a stable structural foundation that guides subsequent manufacturing steps, ensuring precise alignment and positioning of vertical components while maintaining integration density.
Solution Approach 2:
The patent controls the thickness and material properties of each vertical layer (channel layer, gate dielectric layer, mold insulation layers) to optimize both integration density and manufacturing precision. By carefully adjusting layer parameters such as thickness and dielectric constant, the design achieves high integration while remaining compatible with standard semiconductor manufacturing capabilities.
Data Source
AI summary
A three-dimensional semiconductor memory device includes: gate electrodes and mold insulation layers alternately stacked on a substrate; a channel layer passing through the gate electrodes and the mold insulation layers; and a gate dielectric layer between the gate electrodes and the channel layer. The gate dielectric layer and the channel layer may be in an upper portion of the substrate and may be bent at a first angle and extend under the mold insulation layers in the upper portion of the substrate.