3D Semiconductor Metal Layer Layout for Heat Dissipation
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Solution Overview
Problem
The challenge of heat removal in 3D stacked integrated circuits and chips is exacerbated by high thermal resistance and power density, with existing methods like liquid coolant and thermal vias facing inefficiencies.
Innovation Solution
The implementation of a 3D semiconductor device with aligned metal layers and global power distribution networks, utilizing hybrid bonding and thinning techniques to enhance heat removal and reduce alignment errors, along with innovative power distribution grids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If 3D stacking of semiconductor devices is implemented to reduce wire lengths and wiring delay, then transistor density and performance improve, but heat removal becomes more difficult due to high thermal resistance and power density
Solution Approach 1:
The patent transitions from planar 2D heat dissipation to 3D vertical heat dissipation by implementing heat removal paths that extend through multiple stacked levels. Thermal vias and heat dissipation structures are positioned at different vertical levels (first level, second level, third level) to create three-dimensional heat evacuation channels, allowing heat to be removed from interior regions of the stacked device through vertical conduction paths.
Solution Approach 2:
The heat removal system is segmented into multiple independent thermal pathways distributed across different levels of the stacked device. Each level has its own heat removal paths, thermal vias, and heat dissipation structures, allowing heat to be evacuated through multiple parallel channels rather than a single path, thereby reducing thermal resistance.
2Manufacturing precision
If metal layers are aligned with high precision to reduce alignment errors, then manufacturing complexity increases, but device performance and reliability improve
Solution Approach 1:
Alignment marks are formed on each level before the stacking process, and these marks are used to guide the alignment of metal layers during assembly. The alignment marks are prepared in advance (preliminarily) so that when levels are stacked, the metal layers can be precisely aligned using these pre-positioned references, reducing alignment errors without requiring complex real-time adjustment mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces thermal resistance and enhances heat dissipation, improving the performance and efficiency of 3D ICs by aligning metal layers with high precision and incorporating advanced power distribution networks.
Implementation Method 1
The implementation of a 3D semiconductor device with aligned metal layers and global power distribution networks, utilizing hybrid bonding and thinning techniques to enhance heat removal
Data Source
AI summary
A 3D semiconductor device including: a first level with first-transistors, a single crystal layer overlaid by at least one first metal-layer which includes interconnects between the first-transistors forming first control circuits with a sense amplifiers; the first metal-layer(s) overlaid by a second metal-layer which is overlaid by a second level which includes first memory cells which include second-transistors with a metal gate, overlaid by a third level which includes second memory cells which include third-transistors and are partially disposed atop the control circuits, which control the data written to second memory cells; a fourth metal-layer overlaying a third metal-layer which overlays the third level; where third-transistor gate locations are aligned to second-transistor gate locations within greater than 0.2 nm error, the average thickness of second metal-layer is at least twice the average thickness of the third metal-layer; the second metal-layer includes a global power distribution grid.