3D NAND Channel Structure With Acute-Angle Conductive Contact
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Solution Overview
Problem
There is a need for semiconductor devices with increased data storage capacity and improved reliability, particularly in data storage systems where three-dimensional memory cell arrangements are required.
Innovation Solution
A semiconductor device is designed with a stack structure that includes interlayer insulating layers and vertically stacked gate electrodes, a cell guide structure, a first conductive layer, and a protective layer, along with channel structures that penetrate the stack structure and extend upwardly, forming acute angles with the conductive layer, to enhance electrical connectivity and protect against thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are disposed three-dimensionally to increase data storage capacity, then storage capacity is improved, but device complexity increases
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional stacking, where multiple memory layers are vertically stacked above each other. This dimensional change enables significantly increased storage capacity within the same footprint area, addressing the need for higher density storage without proportionally increasing device complexity.
Solution Approach 2:
The patent implements a nested structure where memory cells are arranged in multiple stacked layers, with each layer containing complete sets of word lines, bit lines, and memory elements. These layers are nested vertically, allowing multiple storage levels to be integrated within a compact three-dimensional space, effectively increasing storage capacity while managing structural complexity.
2Reliability
If channel structures extend upwardly at acute angles to enhance electrical connectivity, then electrical conductivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs curved or angled channel structures that extend upwardly at acute angles rather than straight vertical channels. This curved geometry enhances electrical connectivity by providing optimized charge carrier pathways while the specific angular design allows for controlled fabrication processes that balance manufacturing precision requirements with performance optimization.
Data Source
AI summary
A semiconductor device may include a stack structure including gate electrodes stacked in a vertical direction; a cell guide structure on the stack structure and defining a first region of the stack structure; a first conductive layer on the stack structure in the first region and in contact with the cell guide structure; a protective layer on a region of the stack structure; and channel structures each including a first portion and a second portion, the first portion penetrating the stack structure in the vertical direction and the second portion extending upwardly from the first portion and including a channel layer in direct contact with the first conductive layer. A side surface of the first conductive layer and a lower surface of the first conductive layer may form an acute angle on an interfacial surface between the first conductive layer and the cell guide structure.