Modified Semiconductor Assemblies for 3D NAND Corrosion Resistance
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Solution Overview
Problem
During the fabrication of vertically-stacked three-dimensional NAND memory devices, unintended etching of supporting semiconductor material can lead to structural collapse and device failure due to galvanic corrosion, which occurs when metal-containing conductive material is exposed and reacts with the semiconductor material.
Innovation Solution
Distributing modifying substances such as carbon and/or metal within the semiconductor material to alter its properties, preventing or alleviating galvanic corrosion by balancing the chemical properties of the exposed surfaces, thereby reducing the risk of corrosion and maintaining structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal-containing conductive material is exposed during fabrication, then electrical conductivity is improved, but galvanic corrosion occurs causing structural collapse
Solution Approach 1:
An intermediary layer of modifying substance (carbon and/or metal dopants) is introduced between the metal-containing conductive material and the semiconductor material. This intermediary layer prevents direct contact and galvanic corrosion while allowing the metal layer to maintain its electrical conductivity function.
Solution Approach 2:
The chemical composition and properties of the semiconductor material are changed by doping with carbon and/or metal substances. This parameter change modifies the semiconductor material's resistance to galvanic corrosion, making it chemically compatible with the exposed metal-containing conductive material.
2Manufacturing precision
If semiconductor material is etched to expose metal layers, then manufacturing precision is improved, but structural stability deteriorates
Solution Approach 1:
The semiconductor material undergoes parameter changes through doping with modifying substances, which alters its chemical properties and stabilizes it against etching-induced damage and galvanic corrosion, maintaining structural integrity even when exposed.
Solution Approach 2:
The semiconductor material is transformed into a composite material by incorporating carbon and/or metal dopants. This composite structure combines the original semiconductor properties with the corrosion-resistant properties of the modifying substances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modification of semiconductor material properties with carbon and/or metal dopants effectively prevents galvanic corrosion, ensuring the stability and integrity of the vertically-stacked memory device structures and preventing device failure.
Implementation Method 1
unintended etching of supporting semiconductor material can lead to structural collapse and device failure due to galvanic corrosion, which occurs when metal-containing conductive material is exposed and reacts with the semiconductor material
Implementation Method 2
Distributing modifying substances such as carbon and/or metal within the semiconductor material to alter its properties
Data Source
AI summary
Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.