3D NAND Memory Stack Hydrogen Diffusion for Defect Passivation
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Solution Overview
Problem
3D NAND memory devices suffer from defects such as dangling bonds and shallow traps, which affect performance and reliability, limiting their effectiveness.
Innovation Solution
A thermal process is employed to release atomic hydrogen from a dielectric layer containing silicon-nitrogen bonds, allowing it to diffuse into the conductor/insulator stack and passivate defects within the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If 3D NAND memory is used to achieve higher density and capacity, then storage performance is improved, but defects such as dangling bonds and shallow traps increase, worsening reliability
Solution Approach 1:
A dielectric layer containing atomic hydrogen is formed over the conductor/insulator stack before final device completion. This preliminary placement of hydrogen source material allows subsequent thermal processing to release atomic hydrogen that diffuses into the stack and passivates defects, thereby improving reliability while maintaining the high-density 3D structure
2Reliability
If thermal process is applied to release atomic hydrogen and passivate defects, then reliability is improved, but additional processing steps are required, increasing manufacturing complexity
Solution Approach 1:
The dielectric layer serving as both an insulating layer and a hydrogen source layer is combined into a single integrated component. This merging eliminates the need for separate hydrogenation processing steps while still achieving defect passivation through the thermal release of atomic hydrogen from the dielectric material
Solution Approach 2:
The dielectric layer performs multiple functions simultaneously: it provides electrical insulation between conductive elements and serves as a reservoir for atomic hydrogen that passivates defects in the conductor/insulator stack, thereby improving reliability without adding separate dedicated hydrogenation layers or processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal process enhances the performance and reliability of 3D NAND memory devices by effectively passivating defects, improving electron mobility and reducing endurance and charge retention issues.
Implementation Method 1
performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack
Data Source
AI summary
Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, forming a dielectric layer of a dielectric material including atomic hydrogen over a part of the conductor/insulator stack, and performing a thermal process to release the atomic hydrogen from the dielectric material and diffuse the atomic hydrogen into the conductor/insulator stack.