3D NAND Gate Stack Layout With Offset Pad Areas
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Solution Overview
Problem
Current semiconductor devices face limitations in increasing data storage capacity, particularly in achieving high-density storage solutions.
Innovation Solution
The semiconductor device employs a three-dimensional arrangement of memory cells, featuring stacked gate electrodes, interlayer insulating layers, channel structures, and contact plugs, with specific pad and dummy areas configurations to enhance integration and storage density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged two-dimensionally, then device structure is simple and manufacturing is easier, but data storage capacity is limited
Solution Approach 1:
The patent transitions from two-dimensional memory cell arrangement to three-dimensional vertical stacking of memory cells. Multiple layers of memory cells are stacked vertically with interlayer insulating layers between them, enabling significantly increased storage capacity by utilizing the vertical dimension rather than only horizontal plane.
2Quantity of substance
If gate electrodes are stacked vertically to increase storage density, then data storage capacity increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements vertical nesting of multiple gate electrode layers and memory cell layers in a stacked configuration. Each layer is precisely positioned relative to the layers below it, with interlayer insulating layers providing isolation and structural support. This nested vertical arrangement maximizes storage density within the vertical space while maintaining manufacturability through standardized layering processes.
Data Source
AI summary
A semiconductor device includes a first substrate, circuit elements, lower interconnection lines, a second substrate, gate electrodes stacked on the second substrate to be spaced apart from each other in a first direction and forming first and second stack structures, channel structures penetrating through the gate electrodes, and first and second contact plugs penetrating through the first and second stack structures, respectively, and connected to the gate electrodes. The first stack structure has first pad areas in which the gate electrodes extend further than upper gate electrodes, respectively, and are connected to the first contact plugs, respectively. The second stack structure has second pad areas in which the gate electrodes extend further than upper gate electrodes, respectively, and are connected to the second contact plugs, respectively. The first and second pad areas are offset in relation to each other so as not to overlap each other in the first direction.