3D NAND Source Structure Layout for Capacity and Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing data storage capacity while maintaining reliability and productivity.
Innovation Solution
The semiconductor device incorporates a source structure with a plate layer, first and second horizontal conductive layers, gate electrodes, and a channel structure with a separation region, where the first horizontal conductive layer extends horizontally below the separation region and overlaps it, enhancing data storage capacity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the horizontal conductive layer is extended horizontally below the separation region to overlap it, then data storage capacity is improved, but device complexity increases
Solution Approach 1:
The horizontal conductive layer is extended in the horizontal direction below the separation region, utilizing the horizontal dimension to increase storage capacity without adding vertical layers. This dimensional approach allows more storage elements to be packed into the available space by exploiting the horizontal plane beneath existing structures.
Solution Approach 2:
The horizontal conductive layer is nested within the space below the separation region, effectively utilizing the volume that would otherwise be unused. This nesting approach allows the conductive layer to be positioned within the existing device architecture, increasing storage capacity without significantly expanding the overall device footprint or complexity.
2Reliability
If the horizontal conductive layer is extended horizontally below the separation region to overlap it, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The horizontal conductive layer is formed to extend below the separation region in advance, during the manufacturing process. This preliminary action ensures proper alignment and positioning before subsequent manufacturing steps, reducing the need for high-precision adjustments later and improving overall manufacturing feasibility while maintaining reliability.
Solution Approach 2:
The horizontal conductive layer is selectively extended only in specific regions below the separation region where it is needed for reliability improvement. This localized approach allows manufacturing processes to focus precision requirements on critical areas while using less stringent processes in non-critical areas, thereby reducing overall manufacturing precision requirements.
Data Source
AI summary
A semiconductor device includes a source structure including a plate layer and first and second horizontal conductive layers stacked in order on the plate layer, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the source structure, a channel structure penetrating through the gate electrodes, extending in the first direction, and including a channel layer in contact with the first horizontal conductive layer, and a separation region penetrating through the gate electrodes and extending in the first direction and in a second direction perpendicular to the first direction, wherein the first horizontal conductive layer extends horizontally below the separation region and has a seam overlapping the separation region in the first direction.