3D Nanosheet Channel Isolation for Higher Transistor Density
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Solution Overview
Problem
Existing semiconductor device fabrication faces challenges in scaling beyond single digit nanometer nodes due to limitations in transistor density and performance, particularly in planar devices, where vertical stacking is hindered by minimum feature distances.
Innovation Solution
The development of non-planar, 3D transistor structures with vertically stacked channels and self-aligned gate structures, allowing for increased transistor density and reduced spacing through methods such as etching and dielectric replacement, enabling the formation of multi-channel transistors with improved performance and manufacturability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If vertical stacking of transistors is implemented to increase density, then transistor density per unit volume is improved, but minimum feature distances increase which limits device density and performance
Solution Approach 1:
The patent transitions from planar 2D transistor layouts to vertical 3D stacking architectures, where multiple transistor channels are stacked vertically along the z-axis. This dimensional change allows transistors to be arranged in three dimensions rather than confined to a single plane, thereby increasing transistor density per unit volume while managing minimum feature distances through vertical self-alignment mechanisms.
Solution Approach 2:
The patent implements nested structures where gate electrodes and dielectric layers are positioned concentrically around vertically stacked channel regions. Multiple transistor channels are nested within a common vertical stack, with each channel surrounded by its own gate structure, creating a compact nested arrangement that maximizes density while maintaining electrical isolation.
2Device complexity
If multiple fabrication operations are used for device stacking, then vertical integration is achieved, but process complexity increases
Solution Approach 1:
The patent forms complete transistor stacks including channels, gates, and dielectric layers in a predetermined vertical sequence before subsequent processing steps. sacrificial layers are预先 formed to define channel positions, and gate structures are formed around stacked channels in advance of final device completion, enabling later steps to proceed without disrupting the established vertical architecture.
Solution Approach 2:
The patent combines multiple fabrication operations into integrated process sequences. For example, dielectric layer deposition, gate electrode formation, and channel definition are merged into a unified vertical stacking process rather than separate planar operations. Multiple gate structures are formed concurrently around stacked channels in a single process flow, reducing the total number of discrete fabrication steps.
Data Source
AI summary
Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a plurality of first semiconductor channels vertically spaced from one another and a plurality of second semiconductor channels vertically spaced from one another can be provided. The plurality of first semiconductor channels each have a first sidewall in contact with a dielectric structure and the plurality of second semiconductor channels each have a first sidewall in contact with the dielectric structure. Gate structures can be formed around at least a top surface, a bottom surface, and a second sidewall of the first and second semiconductor channels.