3D Semiconductor Package Layout With Backside Capacitors

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor package structures face challenges in thermal and power delivery network design, which reduce the reliability of 3D IC package technology.

Innovation Solution

The semiconductor package structure incorporates a multi-terminal multi-capacitor structure, which is electrically coupled to multiple semiconductor dies through a redistribution layer, allowing for reduced space occupation and improved design flexibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If traditional capacitor placement methods are used in 3D IC packages, then capacitor functionality is achieved, but space occupation increases and design flexibility decreases

Engineering Contradiction:
Improvespace occupationVSAvoiddesign flexibility
Core Design Contradiction:
Quantity of substanceVSAdaptability or versatility

Solution Approach 1:

The patent transitions capacitor placement from the horizontal plane to the vertical dimension by positioning capacitors on the backside of the substrate beneath semiconductor dies. This dimensional change allows capacitors to be stacked vertically, significantly reducing the horizontal space occupation while maintaining electrical coupling to power networks through via structures.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements nesting by placing capacitors underneath the substrate, effectively nesting them within the existing package structure. The capacitors are positioned in the space below the substrate, utilizing otherwise unused volume and allowing multiple capacitors to be arranged in a compact configuration beneath the active components.

Inventive Principle:
Principle #7Nested doll (Nesting)

2Adaptability or versatility

If more conductive terminals are reserved for interconnection, then design flexibility improves, but space for capacitor placement decreases

Engineering Contradiction:
Improvedesign flexibilityVSAvoidspace for capacitor placement
Core Design Contradiction:
Adaptability or versatilityVSArea of stationary object

Solution Approach 1:

The patent resolves this contradiction by moving capacitor placement to the vertical dimension beneath the substrate. This allows the top surface of the substrate to be fully utilized for conductive terminals and interconnections, while capacitors occupy the substrate space below, effectively decoupling the space requirements for terminals and capacitors.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Volume of moving object

If 3D IC package technology is used to reduce footprint, then device size decreases, but thermal and power delivery network reliability problems increase

Engineering Contradiction:
Improvedevice footprintVSAvoidthermal and power delivery network reliability
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent introduces an intermediary power delivery network structure consisting of redistribution layers and via structures that connect capacitors to semiconductor dies. This intermediary network provides dedicated power and ground pathways, improving power delivery reliability and thermal management in the compact 3D package configuration.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12230560B2Semiconductor package structure
Publication Date: 2025.02.18 MEDIATEK INC
  • US12230560B2 patent drawing
  • US12230560B2 patent drawing
  • US12230560B2 patent drawing

AI summary

A semiconductor package structure includes a frontside redistribution layer, a first semiconductor die, a first capacitor, a conductive terminal, and a backside redistribution layer. The first semiconductor die is disposed over the frontside redistribution layer. The first capacitor is disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die. The conductive terminal is disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer. The backside redistribution layer is disposed over the first semiconductor die.