3D Package Bridge Die Layout for Reliable Direct Bonding
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Solution Overview
Problem
In three-dimensional packaged devices, direct bonding techniques face challenges such as warpage-induced failures and insufficient encapsulant deposition due to height-to-width ratios in bridge die interconnects, leading to peeling or voids during the bonding of complex integrated circuit packages like System on Integrate Chip (SoIC).
Innovation Solution
The use of a thinner bridge die with a reduced height-to-width ratio, combined with metal-dielectric bonds at the edges and corners of top dies, enhances bonding interface strength and facilitates reliable encapsulant deposition by aligning bond pads and dielectric layers for direct metal-to-metal and dielectric-to-dielectric bonding, and incorporating landing structures to improve adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct bonding techniques are used to bond device dies in three-dimensional packages, then manufacturing complexity is reduced, but warpage-induced failures occur leading to peeling or voids
Solution Approach 1:
The patent introduces an intermediary material layer between the device dies to facilitate bonding. This intermediary layer acts as a mediator that accommodates warpage differences between dies, preventing direct stress concentration at the bonding interface and eliminating peeling or void formation while maintaining process simplicity
Solution Approach 2:
The patent modifies bonding parameters by controlling the thickness and material properties of the intermediary layer, adjusting thermal expansion coefficients, and optimizing bonding temperature and pressure parameters to reduce warpage effects and improve bonding reliability without increasing process complexity
2Reliability
If bridge die with standard height-to-width ratio is used, then electrical connectivity is achieved, but encapsulant deposition is insufficient due to height-to-width ratio constraints
Solution Approach 1:
The patent employs asymmetric bridge die design where the height-to-width ratio is deliberately modified to be lower than standard ratios. This asymmetric geometry change allows encapsulant to flow and deposit properly in the interconnect region while maintaining adequate electrical connectivity through the bridge die structure
3Adaptability or versatility
If multiple device dies are bonded together in SoIC configuration, then device functionality is enhanced, but bonding interface strength is insufficient leading to failures
Solution Approach 1:
The patent uses composite material structures at the bonding interface, combining multiple materials with complementary properties. The composite structure includes materials with different mechanical and thermal properties that work together to enhance bonding interface strength while accommodating the functional requirements of multiple device dies in the SoIC configuration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach strengthens the bonding interface, reduces warpage-induced failures, and ensures reliable encapsulant deposition, thereby enhancing the reliability and performance of complex integrated circuit packages like SoIC by improving the mechanical and electrical connectivity between device dies.
Implementation Method 1
a dielectric material at an edge of the top die is adjoined to dummy bond pads of the lower die or wafer
Implementation Method 2
aligning bond pads and dielectric layers for direct metal-to-metal and dielectric-to-dielectric bonding
Data Source
AI summary
Embodiments include methods of forming three-dimensional packages and the packages resulting therefrom. The packages may utilize a bridge die to electrically connect one die to another die and at least one additional die adjacent to the bridge die. The height-to-width ratio of the gap between the bridge die and the at least one additional die is controlled by thinning the bridge die to be thinner than the at least one additional die. The packages may utilize landing structures to adjoin a dielectric material of an attached die to a metallic landing structure of a base die.