3D Semiconductor Package Layout for Higher Die Density

The patent implements a three-dimensional stacked die configuration where multiple dies are vertically arranged and interconnected through through-silicon vias (TSVs) and redistribution layers. This vertical stacking approach transitions from a two-dimensional planar layout to a three-dimensional structure, enabling higher integration density without increasing the horizontal package footprint. The dies are connected through conductive vias that penetrate through intermediate dielectric layers, creating a multi-layer integrated structure that efficiently utilizes vertical space.

The patent incorporates thermal management structures that extend vertically through the stacked die configuration. Thermal vias and heat dissipation pathways are integrated into the vertical interconnect structure, allowing heat to conduct through the stacked layers to external heat sinks. This vertical thermal management approach enables effective heat dissipation in a compact three-dimensional package, overcoming the thermal challenges typically associated with reduced package sizes.

The patent employs through-silicon via (TSV) technology where conductive vias are formed through the die substrate before die stacking. These pre-formed vias establish electrical connection pathways in advance, allowing subsequent dies to be connected through the existing via structures. The redistribution layers are also configured to establish multiple electrical connections between stacked dies through these pre-formed vias, simplifying the overall manufacturing process by preparing connection structures beforehand rather than forming them after stacking.