3D Semiconductor Package Layout for Heat and Bandwidth Bottlenecks
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Solution Overview
Problem
The increasing demand for computation power in AI applications poses challenges in packaging design due to heat dissipation and memory bandwidth limitations, requiring a semiconductor structure that can enhance computation capability within a smaller area while managing thermal issues.
Innovation Solution
A semiconductor package design featuring a die-stacking structure with hybrid bonding and conductive pillars, which reduces resistance and facilitates efficient heat dissipation by eliminating the need for underfill, allowing for flexible routing and improved data sharing between dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple cores are embedded to increase computation power, then computation capability increases, but heat dissipation becomes more difficult
Solution Approach 1:
The patent transitions from planar 2D arrangement of multiple cores to a 3D stacked architecture where dies are vertically arranged and interconnected through conductive pillars and TSVs. This dimensional change enables higher computation density while distributing heat generation across multiple vertical layers, improving thermal management capability.
Solution Approach 2:
The computation system is segmented into multiple separate dies stacked vertically, with each die containing specific computation cores or functional units. This segmentation allows independent thermal management for each die layer and enables heat to dissipate through multiple pathways rather than concentrating in a single planar region.
2Area of stationary object
If more computation power is integrated in a smaller area, then area efficiency improves, but memory bandwidth becomes a bottleneck
Solution Approach 1:
The patent implements 3D stacking architecture where memory dies and computation dies are vertically integrated through conductive pillars and TSVs. This vertical integration dramatically shortens the data transmission path between memory and computation units compared to planar arrangements, thereby increasing memory bandwidth while maintaining small footprint area efficiency.
3Power
If die stacking structure is implemented to increase computation density, then computation power density increases, but transmission resistance increases
Solution Approach 1:
The patent replaces traditional mechanical wire bonding or flip-chip bump connections with direct conductive pillar-to-TSV electrical connections between stacked dies. This substitution eliminates the need for intermediate bonding layers and reduces the number of interface points, thereby minimizing transmission resistance and improving signal integrity in the vertical stacking architecture.
4Strength
If conventional packaging with underfill is used, then structural support is provided, but heat dissipation is hindered
Solution Approach 1:
The patent removes the underfill material from the die stacking structure, replacing it with direct conductive pillar connections through TSVs. This extraction eliminates the thermal barrier that underfill creates, allowing heat to conduct more efficiently through the direct metal-to-metal pathways while structural support is maintained through the rigid conductive pillar architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor package effectively increases computation power density, reduces transmission resistance, and alleviates thermal concerns, enhancing data sharing efficiency and overall computing performance.
Implementation Method 1
a plurality of conductive pillars, wherein the plurality of conductive pillars are disposed in the second dielectric layer without contacting the bottom dies
Implementation Method 2
attaching a plurality of bottom dies to the first bonding layer by hybrid bonding
Implementation Method 3
a plurality of solder bumps are disposed on a second surface of the first dielectric layer and are coupled to the first RDL through openings of the first dielectric layer
Data Source
AI summary
The present application discloses a semiconductor package and a method for manufacturing the semiconductor package. The semiconductor package includes a first dielectric layer, a first redistribution layer (RDL) disposed on a first surface of the first dielectric layer, a first bonding layer disposed on the first RDL, a plurality of bottom dies attached to the first bonding layer, a second dielectric layer filling gaps between the bottom dies, a plurality of conductive pillars disposed in the second dielectric layer without contacting the bottom dies, a second RDL disposed on the second dielectric layer and the bottom dies, a second bonding layer disposed on the second RDL, a plurality of top dies attached to the second bonding layer, a third dielectric layer filling gaps between the top dies, and a plurality of solder bumps disposed on a second surface of the first dielectric layer.