3D Package Structure With Hybrid Bonding for Faster Die Interconnects
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Solution Overview
Problem
Existing 3D packaging technologies face challenges with high parasitic capacitance, signal transmission speed limitations, thermal conductivity issues, and bridging problems due to metal micro-bumps, which hinder high-density interconnection and heat dissipation in integrated circuit packaging.
Innovation Solution
A hybrid bonding process is employed using contact pads and dielectric layers to interconnect core dies, reducing the number of micro-bumps and enhancing signal transmission speed and thermal conductivity through copper pillar bumps and dielectric materials like spin on glass, with controlled deformation spaces and alternate annealing to improve bonding quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If metal micro-bumps are used for 3D interconnection, then structural support and electrical connection are achieved, but parasitic capacitance increases and signal transmission speed decreases
Solution Approach 1:
The patent removes the metal micro-bump structure from the interconnection system and replaces it with direct die-to-die contact through bonding interfaces. This extraction of the problematic metal intermediary eliminates the source of parasitic capacitance while maintaining electrical connection functionality through the bonding process.
Solution Approach 2:
The patent introduces dielectric materials as intermediaries between bonding surfaces, replacing the metal micro-bump intermediary. These dielectric layers with controlled thickness and material properties provide electrical isolation and mechanical support without introducing the high parasitic capacitance associated with metal structures, thereby improving signal transmission speed.
2Temperature
If metal micro-bumps are used for interconnection, then electrical connection is established, but thermal conductivity is insufficient
Solution Approach 1:
The patent extracts the metal micro-bump thermal conduction path and replaces it with direct die-to-die thermal contact through bonding interfaces. This removal of thermal barriers at the micro-bump interfaces enables more efficient heat transfer from the die to the substrate, improving overall thermal conductivity of the packaging system.
3Reliability
If conventional bonding processes are used, then dies are connected, but bonding defects and thermal damage occur
Solution Approach 1:
The patent employs hybrid bonding that combines eutectic bonding at lower temperatures with direct bonding techniques, changing the thermal parameters of the bonding process. This parameter optimization enables reliable die-to-die bonding while minimizing thermal damage to sensitive device structures, improving bonding quality and reducing defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hybrid bonding process increases signal transmission speed, reduces thermal resistance, and improves integration by minimizing bonding defects and thermal damage, while maintaining reliability and efficiency in high-density 3D interconnections.
Implementation Method 1
the first contact pad is in contact bonding with the second contact pad; and the first dielectric layer is in contact bonding with the second dielectric layer
Implementation Method 2
enhancing signal transmission speed and thermal conductivity through copper pillar bumps
Implementation Method 3
with controlled deformation spaces and alternate annealing to improve bonding quality
Data Source
AI summary
A package structure includes the following: a logic die; and a plurality of core dies sequentially stacked on the logic die along a vertical direction, in which the plurality of core dies include a first core die and a second core die interconnected through a hybrid bonding member; the hybrid bonding member includes: a first contact pad located on a surface of the first core die; and a second contact pad located on a surface of the second core die; the first contact pad is in contact bonding with the second contact pad.