3D Semiconductor Package With Multi-Sided Cooling Paths
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Solution Overview
Problem
3D ICs face significant thermal management challenges due to limited heat dissipation capabilities, particularly in mobile devices where space is constrained and molding compounds used in packaging act as thermal insulators, leading to overheating issues that reduce performance and reliability.
Innovation Solution
A semiconductor package design featuring a high thermal conductivity (HTC) structure with dual-sided or multi-sided power and signaling, and integrated HTC supporters and spacers, such as diamond interposers, to enhance heat dissipation by allowing skip-die electrical interconnections and multi-sided cooling, utilizing materials like diamond, graphene, or copper for improved thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If molding compounds are used in packaging, then electrical insulation and mechanical protection are improved, but thermal conductivity deteriorates leading to overheating
Solution Approach 1:
The patent segments the packaging structure into multiple functional layers: molding compound for electrical insulation and mechanical protection, and separate high thermal conductivity supporters (interposers) for heat dissipation. This segmentation allows each material to optimize its primary function without compromising the other.
Solution Approach 2:
The high thermal conductivity supporters act as intermediary structures between the semiconductor die and the external environment. These supporters mediate the thermal transfer path, conducting heat away from the die through dedicated thermal pathways while the molding compound continues to provide electrical insulation and mechanical protection.
2Productivity
If 3D IC vertical stacking is implemented, then integration density and computation power are improved, but thermal management difficulty increases
Solution Approach 1:
The patent transitions from traditional single-sided heat dissipation to multi-sided cooling by implementing high thermal conductivity supporters on both the front and back sides of the semiconductor die. This dimensional change in thermal management allows heat to be dissipated simultaneously through multiple pathways, effectively addressing the thermal challenges of 3D vertical stacking.
Solution Approach 2:
The patent applies local quality by placing high thermal conductivity materials specifically where heat generation occurs (immediately under and around the die), while other areas of the package can use standard materials. This localized approach to thermal management targets the critical hot spots without requiring the entire package to be redesigned.
3Temperature
If high thermal conductivity supporters are added, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The high thermal conductivity supporters are designed to perform multiple functions simultaneously: they provide thermal conduction pathways, serve as mechanical support structures, and enable electrical interconnections. This multi-functionality reduces the need for separate dedicated components, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases heat dissipation efficiency, reducing the risk of overheating and improving the performance and reliability of 3D ICs by enabling more efficient thermal management across multiple sides of the package, thereby supporting higher power densities and performance in compact form factors.
Implementation Method 1
The first supporter is disposed immediately under the first die and thermally coupled to the first die. The thermal conductivity of the first supporter is greater than the thermal conductivity of the first die.
Data Source
AI summary
The present application discloses a semiconductor package which includes a processor die powered by either a front-side or a backside power delivery network, a plurality of memory dies and control dies stacked over the processor die, a plurality of high-thermal-conductivity (HTC) interconnects formed on, located between and/or placed side-by-side with the dies, a HTC substrate carrying all the dies, a HTC structural member, and a HTC heat spreader/heatsink with the dies and the HTC heat spreader thermally coupled to other HTC components in the semiconductor package. The semiconductor components can be configured to go beyond the traditional single-sided interconnection and cooling topologies to enable dual-or multi-sided cooling, power supply, and signaling.