3D IC Package Structure with Through-Insulator Vias for Thermal and Power Integrity
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving high-density integration and efficient heat transfer in three-dimensional integration (3D IC) packaging due to limitations in connecting and packaging semiconductor dies, which affects performance and power integrity.
Innovation Solution
The method involves forming conductive pads and strips on semiconductor dies, connecting them with structures that enhance heat transfer and electrical connectivity, followed by encapsulation and redistribution layers to create a package structure that improves power integrity and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If three-dimensional integration technology is implemented to achieve high-density integration, then integration density and performance are improved, but heat transfer efficiency and power integrity deteriorate due to limitations in connecting semiconductor dies
Solution Approach 1:
The patent transitions from traditional planar packaging to three-dimensional integration by stacking multiple semiconductor dies vertically. Through-insulator vias penetrate the insulating encapsulant to establish electrical and thermal connections between stacked dies, enabling high-density integration while maintaining heat transfer pathways through the vertical dimension.
Solution Approach 2:
The patent introduces through-insulator vias as intermediary structures that simultaneously conduct electricity and heat between semiconductor dies. These vias act as mediators that resolve the contradiction by providing dual functionality (electrical connectivity and thermal management) within the three-dimensional package structure.
2Productivity
If three-dimensional integration technology is implemented to achieve high-density integration, then integration density and performance are improved, but power integrity deteriorates due to limitations in connecting semiconductor dies
Solution Approach 1:
The patent implements vertical stacking of semiconductor dies with through-insulator vias providing power and ground connections across multiple layers. This three-dimensional power distribution architecture improves power integrity by reducing current path lengths and minimizing voltage drops compared to traditional planar layouts.
Solution Approach 2:
The patent divides the power distribution network into multiple segmented layers, with each semiconductor die having its own power and ground connections through the insulating encapsulant. This segmentation allows independent optimization of power delivery to each die while maintaining overall power integrity in the three-dimensional package.
3Ease of manufacture
If conventional packaging methods are used to connect semiconductor dies, then manufacturing simplicity is maintained, but heat transfer and electrical connectivity performance deteriorate
Solution Approach 1:
The patent forms through-insulator vias through the insulating encapsulant before mounting the semiconductor dies. This preliminary action simplifies subsequent assembly by pre-establishing the electrical and thermal connection pathways, allowing dies to be directly connected to the substrate through the pre-formed vias without complex post-assembly routing.
Data Source
AI summary
A package structure including a semiconductor die, an insulating encapsulant, a redistribution layer and a plurality of conductive terminals is provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads and a plurality of conductive strips. The conductive pads are disposed on and connected to the plurality of conductive pads, wherein each of the conductive strips is physically connected to at least two conductive pads. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer is disposed on the insulating encapsulant and the semiconductor die, wherein the redistribution layer is electrically connected to the plurality of conductive strips. The plurality of conductive terminals is disposed on the redistribution layer.