3D Substrate Power Converter Layout for Low-EMI Integration
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Solution Overview
Problem
Current power converters, particularly DC-DC converters, face challenges in achieving high power density and efficiency due to parasitic components and electromagnetic interference (EMI) caused by high switching frequencies, and existing integration methods are limited by planar inductor geometries and compatibility issues with semiconductor processes.
Innovation Solution
A semiconductor substrate member with integrated active and passive components, featuring a 3D configuration with trench or through-hole structures and conductive layers, allowing for toroidal or solenoid inductors and capacitors, which reduces parasitic elements and EMI by confining electromagnetic fields within the substrate, enabling higher switching frequencies and tighter integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high switching frequency is used, then power density is improved, but efficiency deteriorates due to increased parasitic components
Solution Approach 1:
The patent transitions from planar 2D inductor geometries to three-dimensional configurations using trench and through-hole structures. This dimensional change allows electromagnetic fields to be confined within the substrate volume, reducing parasitic effects and enabling higher switching frequencies without efficiency loss.
Solution Approach 2:
The patent embeds conductive layers and magnetic materials within trench and through-hole structures inside the substrate. This nesting approach concentrates the magnetic field within the substrate volume, minimizing external electromagnetic interference and reducing parasitic inductance.
2Ease of manufacture
If planar inductor geometries are used, then manufacturing is simplified, but power density is limited
Solution Approach 1:
The patent employs standard semiconductor fabrication processes to create three-dimensional trench and through-hole structures within the substrate. This approach maintains manufacturing simplicity while achieving higher power density through vertical field confinement rather than lateral expansion.
Solution Approach 2:
The patent replaces traditional mechanical wire-winding inductor construction with semiconductor-compatible deposition and etching processes. Conductive layers are deposited and patterned within trench structures using standard semiconductor manufacturing techniques, enabling integration with active devices.
3Adaptability or versatility
If external passive components are connected to semiconductor components, then circuit functionality is achieved, but integration is limited
Solution Approach 1:
The patent merges passive inductor components with active semiconductor devices by fabricating both within the same substrate. The trench and through-hole structures containing conductive and magnetic materials are integrated with semiconductor regions, creating a unified hybrid device that eliminates external connections.
Solution Approach 2:
The patent creates a composite structure combining semiconductor materials with magnetic materials and conductive layers. This composite approach enables co-integration of active and passive functions within a single substrate, achieving high-level integration while maintaining circuit functionality.
4Reliability
If wire-bonding connections are used, then electrical connection is achieved, but parasitic inductances and EMI increase
Solution Approach 1:
The patent extracts and eliminates wire-bonding connections by fabricating all electrical connections within the substrate using integrated conductive layers. This removal of external wire bonds eliminates the associated parasitic inductances and electromagnetic radiation problems.
Solution Approach 2:
The patent replaces expensive and problematic wire-bonding interconnects with simple, planar conductive layers deposited within the substrate. These integrated conductors provide reliable electrical connections without the parasitic effects of elevated wire bonds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of compact, efficient power converters with reduced EMI and parasitic elements, suitable for high-power-density applications, such as mobile devices, while maintaining electromagnetic compatibility and allowing for higher switching frequencies.
Implementation Method 1
an electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern
Implementation Method 2
reduces parasitic elements and EMI by confining electromagnetic fields within the substrate
Data Source
AI summary
A power converter is embodied on a semiconductor substrate member and has a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of an electrically conductive material deposited on respective sides of the semiconductor substrate member. A trench or through-hole is formed (by etching) in the substrate within the first region, and the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern. A second region has an active semiconductor component integrated with the semiconductor substrate by being fabricated by a semiconductor fabrication process. There is also provided a power supply, such as a DC-DC converter, embedded the semiconductor substrate member.